2006
DOI: 10.1016/j.tsf.2005.07.111
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Microstructural defect characterisation of a-Si:H deposited by low temperature HW-CVD on paper substrates

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Cited by 3 publications
(2 citation statements)
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“…[ 4 , 95 ] a-Si:H fi lms have, however, been applied by CVD directly onto paper with an electron mobility of 0.2 cm 2 V − 1 s − 1 (at 150-220 ° C). [ 96 ] Si can be solution processed by using precursors or NPs, but a very high annealing temperature (550-750 ° C) in inert atmosphere is typically required. [ 97 , 98 ] A possible solution to this problem is to use a hybrid system, such as Si NPs mixed with a polymer.…”
Section: Inorganic Semiconductorsmentioning
confidence: 99%
“…[ 4 , 95 ] a-Si:H fi lms have, however, been applied by CVD directly onto paper with an electron mobility of 0.2 cm 2 V − 1 s − 1 (at 150-220 ° C). [ 96 ] Si can be solution processed by using precursors or NPs, but a very high annealing temperature (550-750 ° C) in inert atmosphere is typically required. [ 97 , 98 ] A possible solution to this problem is to use a hybrid system, such as Si NPs mixed with a polymer.…”
Section: Inorganic Semiconductorsmentioning
confidence: 99%
“…4B). This approach to electronics on paper provides an alternative to those that rely on direct thin film deposition of organic [29][30][31][32] or inorganic [33][34][35] electronic materials.…”
mentioning
confidence: 99%