Microstructural compositional, and optical characterization of GaN grown by metal organic vapor phase epitaxy on ZnO epilayers

Rogers, David J.; Téherani, F. Hosseini; Moudakir, T.; Gautier, S.; Jomard, François; Molinari, Michaël; Troyon, M.; McGrouther, D.; Chapman, J. N.; Razeghi, Manijeh; Ougazzaden, A.

doi:10.1116/1.3137967

Cited by 6 publications

(3 citation statements)

References 11 publications

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“…Figure 5 shows the SIMS concentration profiles for Ga, In, N and Zn along the growth direction (in a sample with a thicker ZnO layer than that shown in Figure 1). The profile for Zn indicates some diffusion of Zn into the InGaN/GaN near the GaN/ZnO interface [8][9]. The simulation suggested that an incident electron beam, with an energy of 5kV, stimulated a response from most of the InGaN/GaN layer depth.…”

Section: Ingan Znomentioning

confidence: 99%

“…GaN has the advantage, however, of a mature know-how for p-type doping, while ZnO has proven to be more crystallographically compliant to non-native substrates than GaN. With a view to exploiting both of these strong points, ZnO layers have been proposed as buffer layers for the regrowth of GaN-based p-n devices on amorphous and mismatched substrates [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

Ougazzaden

Rogers²,

Téherani³

et al. 2010

Oxide-Based Materials and Devices

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InGaN/GaN layers were grown on substrates by metalorganic vapour phase epitaxy (MOVPE). The dissociation of ZnO observed during conventional MOVPE growth of InGaN/GaN was combated through the use of a low pressure/temperature MOVPE approach with N 2 as a carrier gas and dimethylhydrazine added to the ammonia (nitrogen precursor) in order to enhance the concentration of atomic nitrogen at relatively low temperature. Electron Microscopy of cross-sections, High Resolution X-Ray Diffraction (HR-XRD), secondary ion mass spectroscopy and cathodoluminescence studies suggested that single phase wurtzite InGaN layers with between about 17.5 and 21.5% indium were grown epitaxially, with no evidence of back-etching of the ZnO templates. HR-XRD revealed highly pronounced c-axis texture for both the InGaN/GaN and ZnO. Immersion in dilute nitric acid dissolved the ZnO such that the InGaN/GaN could be lifted-off from the substrate.

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Section: Ingan Znomentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

Ougazzaden

Rogers²,

Téherani³

et al. 2010

Oxide-Based Materials and Devices

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“…X-ray diffraction (XRD) measurements revealed epitaxial growth [8,9] with a FWHM of 0.006° for the (0002) peak high resolution omega scan and an (open-detector) omega rocking curve value of about 0.05°, characteristic of a highly oriented material with very low crystallographic dispersion. The 2θ-ω scan of the (0002) peak gave a c lattice parameter of 5.215 Å.…”

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confidence: 99%

Waveguiding-assisted random lasing in epitaxial ZnO thin film

Dupont

Couteau

Rogers³

et al. 2010

Applied Physics Letters

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Zinc Oxide thin films were grown on c-sapphire substrates using pulsed laser deposition. Pump power dependence of surface emission spectra, acquired using a quadrupled 266 nm laser, revealed room temperature stimulated emission (threshold of 900 kW/cm2). Time dependent spectral analysis plus gain measurements of single-shot, side-emission, spectra pumped with a nitrogen laser revealed random lasing indicative of the presence of self-forming laser cavities. It is suggested that random lasing in an epitaxial system rather than a 3-dimensional configuration of disordered scattering elements, was due to waveguiding in the film. Waveguiding causes light to be amplified within randomly-formed closed-loops acting as lasing cavities

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Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

Gautier

Moudakir

Patriarche

et al. 2013

Journal of Crystal Growth

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Microstructural compositional, and optical characterization of GaN grown by metal organic vapor phase epitaxy on ZnO epilayers

Abstract: Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

Cited by 6 publications

References 11 publications

Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

Waveguiding-assisted random lasing in epitaxial ZnO thin film

Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

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