The constrained sintering kinetics of 8 mol % Y 2 O 3 /92 mol % ZrO 2 (8YSZ) films approximately 10 -15 µm thick screen-printed on dense YSZ substrates, and the resulting stress induced in the films, were measured in the temperature range 1100 to 1350°C. The results are compared with those reported earlier for yttria-partially stabilised zirconia (3YSZ) films.Both materials behave similarly, although there are differences in detail. The constrained densification rate was greatly retarded compared with the unconstrained densification rate measured on pellets and free-standing films at a given temperature and density. The degree of retardation is too large to be explained by simple models of constrained sintering. This is due to the effect of the constraint on the developing anisotropic microstructure and, in the case of 8YSZ, considerable grain growth.The stress generated during constrained sintering was measured by monitoring substrate bending in-situ during sintering and was typically a few MPa. This method also requires the substrate viscosity (creep) to be measured. The apparent activation energies for free sintering, constrained sintering, creep and grain growth are found to cover a wide range (135 -670 kJ mole -1 ) despite all probably being mainly controlled by grain boundary cation diffusion. The reasons for this are discussed and the dangers inherent in deducing mechanisms of such complex phenomena from their apparent activation energies are highlighted.