Microstructural and optical studies of multiply stacked CdSe/ZnSe quantum-dot structures with a large ZnSe spacer thickness

Kim, T.W.; Choo, D. C.; Lee, D.U.; Jung, M.; Cho, J.W.; Yoo, Kyung Ho; Lee, S.; Seo, Kwang-Yell; Furdyna, J. K.

doi:10.1016/s0038-1098(02)00088-1

Cited by 6 publications

(4 citation statements)

References 14 publications

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“…An activation energy of luminescence quenching for the sample is of about 120 meV. The value obtained is close to ones reported in literature [6][7][8].…”

Section: Methodssupporting

confidence: 88%

Optical properties of CdSe/ZnSe nanostructures grown by MBE on virtual Si/Ge substrates

Onishchenko

Казаков

Rzaev

2006

Phys. Status Solidi (c)

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In this paper, the luminescent properties (5 -300 K) of CdSe/ZnSe quantum dot structures grown on conventionally used GaAs(100) substrates and Si(100)/Ge virtual substrates are studied. It has been established that the quantum dot structures grown on different substrates exhibit comparable high luminescence efficiency. Two peaks were observed in the luminescence spectra of some samples grown on GaAs as well as Si/Ge substrates. They are attributed to the emission from two types CdSe islands (quantum dots) between which there is no efficient exciton transfer.

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“…An activation energy of luminescence quenching for the sample is of about 120 meV. The value obtained is close to ones reported in literature [6][7][8].…”

Section: Methodssupporting

confidence: 88%

Optical properties of CdSe/ZnSe nanostructures grown by MBE on virtual Si/Ge substrates

Onishchenko

Казаков

Rzaev

2006

Phys. Status Solidi (c)

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“…QD multilayers grown on different kind of substrates exhibit activation energies of PL quenching in the range from 90 to 120 meV. These values are close to those reported in literature for CdSe/ZnSe QDs [5][6][7]. PL of the samples grown on Si/Ge substrates is detectable up to room temperature.…”

supporting

confidence: 87%

Temperature dependence of photoluminescence of CdSe/ZnSe quantum dots grown on GaAs and Si/Ge virtual substrates

Onishchenko

Багаев

Казаков

et al. 2006

Phys. Status Solidi (c)

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We have carried out temperature-dependent studies of the photoluminescence properties of a set of CdSe/ZnSe quantum dot structures grown on conventionally used GaAs(100) substrates and Si(100)/Ge virtual substrates. Both single-layer and multilayer QD structures have been studied. It was shown that the conventional MBE technique allows to grow CdSe/ZnSe QDs having the activation energy of luminescence quenching as large as 200 meV. Such issues as possible reasons of such a large activation energy and exciton migration in QD planes are discussed.1 Introduction Growth of self-assembled II-VI and III-V quantum dots (QDs) on Si substrates is of a crucial importance for the integration of optoelectronic devices with the mainstream silicon-based technology. It is difficult to obtain high-quality ZnSe epilayers directly on the Si substrate due to large lattice mismatch between these semiconductors. ZnSe and Ge have close lattice constants and, consequently, Ge is more convenient material for growing ZnSe-based heterostructures than Si. In principle, a sequence of epitaxial layers can be grown on Si substrates which has Ge-layer with relatively high structural quality as a cap layer. Such epitaxial structure can be used as a substrate (so-called "virtual" substrate) for growth of ZnSe.A new technique of growth of high-quality CdSe/ZnSe QD structures on virtual Si(100)/Ge substrates has recently been developed by our group. TEM and X-ray studies have showed that high-quality selfassembled CdSe/ZnSe QD structures could be grown on Si/Ge virtual substrates [1]. It was established also that the photoluminescence (PL) efficiency of such structures is comparable with those of analogous QD structures grown on GaAs substrates [2].It is important for design of II-VI QD blue-green laser structures and light-emitting devices integrated with the silicon-based technology and operated at room temperature to study the influence of structure parameters on the temperature dependence of their luminescent properties. Studies of the PL temperature dependence of CdSe/ZnSe QDs grown on conventionally used GaAs (100) substrates and Si(100)/Ge virtual substrates are reported.

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“…It is natural that our films have thickness in the 200 nm where as ML layers of thickness are in the range about 4 to 12 nm and the effect of nanodimensional property comes into play. Similarly PL studies for multiply stacked CdSe quantum--dot (QD) arrays with a large ZnSe space thickness were conducted by Kirm et al [23]. Their PL spectrum at 20 K showed a broad peak at 2.45 eV, which is related to interband transition from the ground electronic subband to the ground heavy hole subband (E 0 − HH 1 ) of the CdSe QDs.…”

Section: Resultsmentioning

confidence: 84%

Growth and Characterization of Wide-Gap Cd_1-xZn_xSe Ternary Alloys by Using Electron Beam Evaporation Technique

et al. 2010

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Cd1−xZnxSe films with different zinc content were deposited by electron beam evaporation technique onto glass substrates for the application of solid-state photovoltaic devices. The structural, surface morphological and optical properties of Cd1−xZnxSe films have been studied in the present work. The host material, Cd1−xZnxSe, has been prepared by the physical vapor deposition method of electron beam evaporation technique under the pressure of 1 × 10 −5 mbar. The X-ray diffractogram indicates that these alloy films are polycrystalline in nature, of hexagonal structure with strong preferential orientation of the crystallites along (0 0 2) direction. Linear variation of lattice constant with composition (x) is observed. Surface roughness measured by atomic force microscopy is used to estimate the interface roughness. The optical properties show that the band gap (Eg) values vary from 2.08 to 2.64 eV as zinc content varies from 0.2 to 0.8. The surface morphological studies show the very small, fine and hardly distinguishable grains smeared all over the surface. The material properties would be altered and excellently controlled by adiusting the system composition x.

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Microstructural and optical studies of multiply stacked CdSe/ZnSe quantum-dot structures with a large ZnSe spacer thickness

Cited by 6 publications

References 14 publications

Optical properties of CdSe/ZnSe nanostructures grown by MBE on virtual Si/Ge substrates

Optical properties of CdSe/ZnSe nanostructures grown by MBE on virtual Si/Ge substrates

Temperature dependence of photoluminescence of CdSe/ZnSe quantum dots grown on GaAs and Si/Ge virtual substrates

Growth and Characterization of Wide-Gap Cd_1-xZn_xSe Ternary Alloys by Using Electron Beam Evaporation Technique

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Microstructural and optical studies of multiply stacked CdSe/ZnSe quantum-dot structures with a large ZnSe spacer thickness

Cited by 6 publications

References 14 publications

Optical properties of CdSe/ZnSe nanostructures grown by MBE on virtual Si/Ge substrates

Optical properties of CdSe/ZnSe nanostructures grown by MBE on virtual Si/Ge substrates

Temperature dependence of photoluminescence of CdSe/ZnSe quantum dots grown on GaAs and Si/Ge virtual substrates

Growth and Characterization of Wide-Gap Cd1-xZnxSe Ternary Alloys by Using Electron Beam Evaporation Technique

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Growth and Characterization of Wide-Gap Cd_1-xZn_xSe Ternary Alloys by Using Electron Beam Evaporation Technique