Abstract:We have carried out temperature-dependent studies of the photoluminescence properties of a set of CdSe/ZnSe quantum dot structures grown on conventionally used GaAs(100) substrates and Si(100)/Ge virtual substrates. Both single-layer and multilayer QD structures have been studied. It was shown that the conventional MBE technique allows to grow CdSe/ZnSe QDs having the activation energy of luminescence quenching as large as 200 meV. Such issues as possible reasons of such a large activation energy and exciton m… Show more
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