Microscopic simulation of RF noise in junctionless nanowire transistors

Noei, Maziar; Jungemann, C.

doi:10.1007/s10825-018-1199-4

Cited by 3 publications

(3 citation statements)

References 19 publications

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“…In order to validate the model, the results are compared to consistent simulations by other means. The BE is solved in addition based on the H-transformation [21] and by projection onto the first 10 Hermitian polynomials (TM) [14], and the results are almost identical. At V DS = 0.2 V , the calculations by the H-transformed BE and moments equations differ by ≈ 1.5% for V GS = 0.6 V and ≈ 0.8% for V GS = 0.5 V , where an energy grid with a uniform spacing of approximately 2.6 meV has been used for the H-transformed BE.…”

Section: Resultsmentioning

confidence: 99%

“…These equations together with the smallsignal PE and the small-signal version of the boundary conditions (27), (28) can be used to assemble a linear system of equations for the complete system. For the calculation of the small-signal terminal currents, a formulation of the Ramo-Shockley theorem is used that is consistent with the presented numerical framework [21,37]. Thus, admittance parameters can be calculated as a function of the complex frequency s, as required by the analysis of plasma instabilities.…”

Section: The Solution Of the Small-signal Be Is Obtainedmentioning

confidence: 99%

“…The most frequently applied method to solve the BE is the Monte-Carlo method [19], but there are no Monte-Carlo methods known to the authors that can perform small-signal simulations at complex frequencies required by the Dyakonov-Shur approach to plasma instabilities. On the other hand, deterministic solvers for the BE have been successfully used in the case of nanowire transistors (e.g., [20]), even including small-signal calculations [21]. In these cases, a transformation from the wavenumber to energy is used, which causes trouble in the case of a 1D k-space, because the density of states diverges at zero energy.…”

Section: Introductionmentioning

confidence: 99%

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A numerical approach to quasi-ballistic transport and plasma oscillations in junctionless nanowire transistors

2020

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A numerical framework for DC and RF small-signal simulations of nanowire transistors is presented, which is based on the self-consistent solution of the Poisson, Schrödinger, and Boltzmann transport equations and is stable for the entire range from weak to strong particle scattering. The proposed approach does not suffer from the deficiencies due to the transformation of the Boltzmann transport equation into the energy space and can handle the quasi-ballistic case. This is a key requirement for the investigation of plasma resonances and other high-mobility phenomena. The in-house solver is validated with results of a previously developed simulator based on the H-transformation for a conventional N + NN + silicon transistor with strong scattering. Then, its results are compared with those of moments-based models and it is shown that these do not provide a satisfactory description of the electron dynamics in the quasi-ballistic transport regime. Furthermore, the internal boundary conditions of the transport models at the contacts are found to have a significant impact on plasma resonances and the physics-based thermal-bath boundary condition strongly suppresses them.

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Section: Resultsmentioning

confidence: 99%