A Godunov-Type Stabilization Scheme for Large-Signal Simulations of a THz Nanowire Transistor Based on the Boltzmann Equation

Noei, Maziar; Linn, Tobias; Luckner, Paul; Jungemann, C.

doi:10.1109/ted.2021.3073677

Cited by 3 publications

(1 citation statement)

References 24 publications

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“…Such a progress benefits from the result of continuous endeavor on a broad range of research areas including 2D semiconductor materials, 13,14 photonic and solid-state devices, [15][16][17][18] heterogeneous integration, [19][20][21][22] and THz packaging. [23][24][25][26] Many pioneering works have systematically demonstrated compact THz technologies like microbolometers, [27][28][29] nanowires, [30][31][32] quantum-cascade lasers, [33][34][35] plasmonic metadevices, [36][37][38][39][40] silicon metamaterials, [41][42][43][44][45] and on-chip high-speed functional materials. [46][47][48] More importantly, many of these endeavors have paved new ways to explore techniques that can be fabricated by solid-state semiconductor technologies (silicon based or III-V semiconductors).…”

Section: Introductionmentioning

confidence: 99%

Review of recent progress on solid‐state millimeter‐wave and terahertz signal sources

Shan

Liang

Li³

et al. 2023

Circuit Theory & Apps

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SummaryThe research and development on solid‐state source generators have been making progress on chip, aiming to generate low noise, high output power, and high DC‐to‐RF energy efficiency in the millimeter‐wave (mmW) and terahertz (THz) domains. In particular, their full integration in silicon technologies, such as advanced complementary‐metal‐oxide‐semiconductor processes, has motivated the design of low cost, high performance, and miniature integrated circuits (ICs). This manuscript focuses on providing a general overview of recent progress on solid‐state signal source operating beyond 60 GHz till the THz region, from the perspective of operating principle, design metrics, state‐of‐the‐art performance, testing results, and their applications in emerging mmW/THz systems. Finally, with the use of fully integrated source generators, several design arts are highlighted to showcase the recent advances of ICs toward millimeter‐wave and THz radiation, imaging, coupled oscillator network (CON), and communication. Potential future research directions enabled by mmW/THz signal sources will be envisioned.

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Section: Introductionmentioning

confidence: 99%

Review of recent progress on solid‐state millimeter‐wave and terahertz signal sources

Shan

Liang

Li³

et al. 2023

Circuit Theory & Apps

View full text Add to dashboard Cite

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Numerical aspects of a Godunov-type stabilization scheme for the Boltzmann transport equation

et al. 2022

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We discuss the numerical aspects of the Boltzmann transport equation (BE) for electrons in semiconductor devices, which is stabilized by Godunov’s scheme. The k-space is discretized with a grid based on the total energy to suppress spurious diffusion in the stationary case. Band structures of arbitrary shape can be handled. In the stationary case, the discrete BE yields always nonnegative distribution functions and the corresponding system matrix has only eigenvalues with positive real parts (diagonally dominant matrix) resulting in an excellent numerical stability. In the transient case, this property yields an upper limit for the time step ensuring the stability of the CPU-efficient forward Euler scheme and a positive distribution function. Similar to the Monte-Carlo (MC) method, the discrete BE can be solved in time together with the Poisson equation (PE), where the time steps for the PE are split into shorter time steps for the BE, which can be performed at minor additional computational cost. Thus, similar to the MC method, the transient approach is matrix-free and the solution of memory and CPU intensive large systems of linear equations is avoided. The numerical properties of the approach are demonstrated for a silicon nanowire NMOSFET, for which the stationary I–V characteristics, small-signal admittance parameters and the switching behavior are simulated with and without strong scattering. The spurious damping introduced by Godunov’s (upwind) scheme is found to be negligible in the technically relevant frequency range. The inherent asymmetry of the upwind scheme results in an error for very strong scattering that can be alleviated by a finer grid in transport direction.

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Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers—Part I: Simulation Tools and Application to Sample Structures

Leenders,

Müller,

Jungemann

et al. 2023

IEEE Trans. Electron Devices

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A Godunov-Type Stabilization Scheme for Large-Signal Simulations of a THz Nanowire Transistor Based on the Boltzmann Equation

Cited by 3 publications

References 24 publications

Review of recent progress on solid‐state millimeter‐wave and terahertz signal sources

Review of recent progress on solid‐state millimeter‐wave and terahertz signal sources

Numerical aspects of a Godunov-type stabilization scheme for the Boltzmann transport equation

Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers—Part I: Simulation Tools and Application to Sample Structures

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