Microscopic Origin for Electrically Benign Small-angle Grain Boundaries in Low-cost Semiconductors

This paper presents a comparative analysis of the structure and photoluminescence (PL) of Si containing dislocations introduced by thermal shock or ion implantation. To study the structure of dislocation cores and their interaction with point defects, we used a high-resolution transmission mode during in situ electron irradiation in the JEM4000EX operating at 400 kV. An appropriate PL spectrum was obtained on dislocated Si after electron irradiation by an external pulse gun operating at 350 kV. This resulted only in an increase in the D2 line intensity that correlated with the formation of metastable interstitial defects on {001}, {111}, and {113} planes near various dislocation cores during in situ electron irradiation, regardless of their types. However, the D1 line relates to a core structure of a shuffle Lomer dislocation consisting of 5/7 atomic rings, which occurs when two shuffle 60° dislocations (so-called S1 type [Pizzagalli et al., Phys. Rev. Lett. 103, 065505 (2009)]) combine with each other in intersecting {111} planes in plastically deformed Si or when an extrinsic Frank partial dislocation transforms into a perfect one in an ion-implanted layer.

show abstract

On the structure and photoluminescence of dislocations in silicon

Fedina

Гутаковский

Шамирзаев

2018

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

Biaxially oriented CdTe films on glass substrate through nanostructured Ge/CaF₂buffer layers

Lord

Bhat

et al. 2015

Mater. Res. Express

View full text Add to dashboard Cite

Structural Transformations of the Dislocation Cores in Si and Their Relationship with Photoluminescence

et al. 2021

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Microscopic Origin for Electrically Benign Small-angle Grain Boundaries in Low-cost Semiconductors

Cited by 3 publications

References 36 publications

On the structure and photoluminescence of dislocations in silicon

On the structure and photoluminescence of dislocations in silicon

Biaxially oriented CdTe films on glass substrate through nanostructured Ge/CaF₂buffer layers

Structural Transformations of the Dislocation Cores in Si and Their Relationship with Photoluminescence

Contact Info

Product

Resources

About

Microscopic Origin for Electrically Benign Small-angle Grain Boundaries in Low-cost Semiconductors

Cited by 3 publications

References 36 publications

On the structure and photoluminescence of dislocations in silicon

On the structure and photoluminescence of dislocations in silicon

Biaxially oriented CdTe films on glass substrate through nanostructured Ge/CaF2buffer layers

Structural Transformations of the Dislocation Cores in Si and Their Relationship with Photoluminescence

Contact Info

Product

Resources

About

Biaxially oriented CdTe films on glass substrate through nanostructured Ge/CaF₂buffer layers