Biaxially oriented CdTe films on glass substrate through nanostructured Ge/CaF<sub>2</sub>buffer layers

Lord, R. J.; Su, Pei-Fang; Bhat, Ishwara B.; Zhang, S. B.; Lu, Toh‐Ming; Wang, G. C.

doi:10.1088/2053-1591/2/9/095017

Cited by 3 publications

(2 citation statements)

References 36 publications

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“…Epitaxial CdTe film has also been shown to grow on glass substrate using nanostructured buffer layer of Ge(111)/CaF 2 (111) [24]. Biaxial CdTe films have also been shown to grow on large grain biaxial Ni(100) foils [25,26] and biaxial CaF 2 (111) on glass substrate [27].…”

Section: Introductionmentioning

confidence: 99%

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

Yang

Seewald

Mohanty

et al. 2017

Applied Surface Science

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Single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (~21-55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection highenergy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [1 � 21 � ] CdTe //[1100] CdS //[010] mica , respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. The use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.

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Section: Introductionmentioning

confidence: 99%

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

Yang

Seewald

Mohanty

et al. 2017

Applied Surface Science

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“…The facets of the top surfaces of the nanorods are highly aligned (111) planes of CaF 2 . These nanorod arrays have been studied for multiple applications where they serve as a buffer layer to grow biaxially textured thin films since the highly ordered facets behave similarly as a single crystal surface [35][36][37]. In this work Ag is selected as a model to study the growth of nanoparticles on the facets of CaF 2 nanotips.…”

Section: Introductionmentioning

confidence: 99%

Facet-mediated growth of silver nanoparticles on biaxial calcium fluoride nanorod arrays

Auer

Ye²

2016

Nanotechnology

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The surface orientation of metal nanoparticles is critical to their physical and chemical properties. This study aims on the understanding of the effect of surface orientation as well as heterogeneous epitaxy of metal nanoparticles at an interface between two materials with a large lattice mismatch. Silver nanoparticles of different diameters were grown on arrays of calcium fluoride (CaF) nanorods using oblique angle deposition as a model system for this study. Scanning electron microscopy and transmission electron microscopy (TEM) imaging were used to verify that the nanoparticles were selectively grown on the desired {111} facets of the nanorod tips. Using selected area diffraction and dark field imaging in TEM, it was shown that the nanoparticles were grown at a (111) orientation at the CaF interface with large lattice strains. Thus biaxially textured CaF nanorod arrays can be used as a catalytic support.

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Heteroepitaxy of Ge on Cube-Textured Ni(001) Foils Through CaF2 Buffer Layer

Chen

et al. 2016

MRS Advances

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Epitaxial Ge films are useful as a substrate for high-efficiency solar cell applications. It is possible to grow epitaxial Ge films on low cost, cube textured Ni(001) sheets using CaF2(001) as a buffer layer. Transmission electron microscopy (TEM) analysis indicates that the CaF2(001) lattice has a 45o in-plane rotation relative to the Ni(001) lattice. The in-plane epitaxy relationships are CaF2[110]//Ni[100] and CaF2[$\bar 1$10]//Ni[010]. Energy dispersive spectroscopy (EDS) shows a sharp interface between Ge/CaF2 as well as between CaF2/Ni. Electron backscatter diffraction (EBSD) shows that the Ge(001) film has a large grain size (∼50 μm) with small angle grain boundaries (< 8o). The epitaxial Ge thin film has the potential to be used as a substrate to grow high quality III-V and II-VI semiconductors for optoelectronic applications.

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Biaxially oriented CdTe films on glass substrate through nanostructured Ge/CaF₂buffer layers

Cited by 3 publications

References 36 publications

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

Facet-mediated growth of silver nanoparticles on biaxial calcium fluoride nanorod arrays

Heteroepitaxy of Ge on Cube-Textured Ni(001) Foils Through CaF2 Buffer Layer

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Biaxially oriented CdTe films on glass substrate through nanostructured Ge/CaF2buffer layers

Cited by 3 publications

References 36 publications

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

Facet-mediated growth of silver nanoparticles on biaxial calcium fluoride nanorod arrays

Heteroepitaxy of Ge on Cube-Textured Ni(001) Foils Through CaF2 Buffer Layer

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Biaxially oriented CdTe films on glass substrate through nanostructured Ge/CaF₂buffer layers