Microscopic Investigation into the Electric Field Effect on Proximity-Induced Magnetism in Pt

Yamada, Keitaro; Suzuki, Motohiro; Pradipto, Abdul‐Muizz; Koyama, Tanetoshi; Kim, S.; Kim, K.-J.; Ono, Shimpei; Taniguchi, Tomoyo; Mizuno, Hideo; Ando, Fuyuki; Oda, Kazuhiro; Kakizakai, Haruka; Moriyama, Takahiro; Nakamura, Kohji; Chiba, Daichi; Ono, Teruo

doi:10.1103/physrevlett.120.157203

Cited by 31 publications

(69 citation statements)

References 47 publications

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“…116. As discussed in the recent review paper [111], it has been widely recognized that the XAS/XMCD spectroscopy is a powerful tool to investigate the voltage-induced effects in spintronic devices [28,113,116,119,120,121,122,123,124].…”

Section: Physical Origin Of the Vcma Effectmentioning

confidence: 99%

Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

et al. 2019

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The electron spin degree of freedom can provide the functionality of “nonvolatility” in electronic devices. For example, magnetoresistive random access memory (MRAM) is expected as an ideal nonvolatile working memory, with high speed response, high write endurance, and good compatibility with complementary metal-oxide-semiconductor (CMOS) technologies. However, a challenging technical issue is to reduce the operating power. With the present technology, an electrical current is required to control the direction and dynamics of the spin. This consumes high energy when compared with electric-field controlled devices, such as those that are used in the semiconductor industry. A novel approach to overcome this problem is to use the voltage-controlled magnetic anisotropy (VCMA) effect, which draws attention to the development of a new type of MRAM that is controlled by voltage (voltage-torque MRAM). This paper reviews recent progress in experimental demonstrations of the VCMA effect. First, we present an overview of the early experimental observations of the VCMA effect in all-solid state devices, and follow this with an introduction of the concept of the voltage-induced dynamic switching technique. Subsequently, we describe recent progress in understanding of physical origin of the VCMA effect. Finally, new materials research to realize a highly-efficient VCMA effect and the verification of reliable voltage-induced dynamic switching with a low write error rate are introduced, followed by a discussion of the technical challenges that will be encountered in the future development of voltage-torque MRAM.

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Section: Physical Origin Of the Vcma Effectmentioning

confidence: 99%

Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

et al. 2019

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“…The important feature of the emission of halide perovskites is their excitonic nature. A number of studies reported contradicting results on the Wannier-Mott exciton binding energies around 41 meV [33] for MAPbCl 3 ; 15-40 meV [34][35][36][37] for MAPbBr 3 ; and 5-15 meV [38,39] for MAPbI 3 . The uncertainties of the values can be attributed to a difference in the studied samples and their morphology.…”

Section: Linear Optics With Perovskitesmentioning

confidence: 99%

Halide‐Perovskite Resonant Nanophotonics

Makarov

Furasova

Tiguntseva

et al. 2018

Advanced Optical Materials

164

130

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Halide perovskites have emerged recently as promising materials for many applications in photovoltaics and optoelectronics. Recent studies of their optical properties suggest many novel opportunities for a design of advanced nanophotonic devices due to low-cost fabrication, high values of the refractive index, existence of excitons at room temperatures, broadband bandgap tunability, high optical gain and nonlinear response, as well as simplicity of their integration with other types of structures. This paper provides an overview of the recent progress in the study of optical effects originating from nanostructured perovskites, including their potential applications.

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“…The control of magnetic properties by applying an electric field is discussed in the literature since many years [1][2][3][4][5][6][7][8][9][10][11][12]. Apart from the well known example of the magneto-crystalline anisotropy (MCA) influenced by an electric field [5,[13][14][15][16], various types of the magnetoelectric (ME) effects have been discussed.…”

Section: Introductionmentioning

confidence: 99%

Electric-field control of the exchange interactions

Mankovsky,

Simon,

Polesya

et al. 2021

Preprint

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The impact of an applied electric field on the exchange coupling parameters has been investigated based on first-principles electronic structure calculations by means of the KKR Green function method. The calculations have been performed for a Fe film, free-standing and deposited on two different substrates, having 1 monolayer (ML) thickness to minimize the effect of screening of the electric field typical for metallic systems. By comparing the results for the free-standing Fe ML with those for Fe on the various substrates, we could analyze the origin of the field-induced change of the exchange interactions. Compared to thefree-standing Fe ML, in particular rather pronounced changes have been found for the Fe/Pt(111) system due to the localized electronic states at the Fe/Pt interface, which are strongly affected by the electric field and which play an important role for the Fe-Fe exchange interactions.

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Microscopic Investigation into the Electric Field Effect on Proximity-Induced Magnetism in Pt

Cited by 31 publications

References 47 publications

Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

Halide‐Perovskite Resonant Nanophotonics

Electric-field control of the exchange interactions

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