Microscopic analysis of optical gain in InGaN∕GaN quantum wells

Witzigmann, Bernd; Laino, V.; Luisier, Mathieu; Schwarz, Uli; Feicht, Georg; Wegscheider, Werner; Engl, Karl; Furitsch, M.; Leber, Andreas; Lell, A.; Härle, V.

doi:10.1063/1.2164907

Cited by 71 publications

(52 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One of the most important stages of the device improvement is an investigation of active region amplification features. Although many techniques of semiconductor gain measurements have been developed [1][2][3] the question concerning the physics of this process in nitride-based materials has been still brought up in numbers of publications [4][5][6]. Carrier dependent gain spectra have been theoretically determined taking into account internal piezoelectric fields, homogeneous broadening due to carrier-carrier and carrier-phonon scattering, bandfilling, Coulomb induced band gap renormalization and it's random fluctuation [7].…”

Section: Introductionmentioning

confidence: 99%

Optical gain and saturation behavior in homoepitaxially grown InGaN/GaN/AlGaN laser structures

Świetlik

Perlin

Suski

et al. 2007

Phys. Status Solidi (c)

View full text Add to dashboard Cite

Optical gain and losses in semiconductor laser epilayers are of profound importance in device optimization. We used both parameters to estimate the potential of InGaN/GaN/AlGaN epitaxial system to be used as a laser structure emitting in a blue region. The sample was grown homoepitaxially by MOVPE technique on high quality bulk GaN substrates obtained in high pressure growth process. These structures are characterized by very low dislocation density (around 10 5 cm -2). As a result the reduction of a nonradiative recombination is expected which is reflected in reduced excitation pump power and gain saturation processes described by means of saturation length and a product of the latter and a maximum modal gain. To determine gain value and its saturation behavior a variable stripe length method is used employing one dimensional amplifier model. Maximum gain value of 190 cm -1 together with internal losses of 15 cmare determined for the studied structure. Low value of maximum saturation length of 320 um was found in our structures.

show abstract

Section: Introductionmentioning

confidence: 99%

Optical gain and saturation behavior in homoepitaxially grown InGaN/GaN/AlGaN laser structures

Świetlik

Perlin

Suski

et al. 2007

Phys. Status Solidi (c)

View full text Add to dashboard Cite

show abstract

“…On one hand these gain spectra act as reference for microscopic gain simulations (Witzigmann et al 2006;Hader et al 2006). On the other hand we extract several parameters as input for the rate-equation model of the laser dynamics: differential gain, gain dispersion (i.e.…”

Section: Optical Gainmentioning

confidence: 99%

(Al,In)GaN laser diodes in spectral, spatial, and time domain: near-field measurements and basic simulations

Schwarz

2008

Opt Quant Electron

View full text Add to dashboard Cite

The near-field lateral intensity distribution of 405 nm (Al,In)GaN laser diodes is measured in time and wavelength domain. Spectral properties, relaxation oscillations, and filaments are observed. A thermally induced change of the refractive index profile is found to be the driving force behind changes in the dynamic mode configuration. With rate equations those effects can be described in first approximation.

show abstract

“…The nonuniform emission intensity across the emission aperture with several bright emission spots was observed. The earlier report showed that InGaN MQWs tend to have indium inhomogeneity [50]; thus, we believe that the nonuniformity in the emission intensity across the aperture could be due to the indium nonuniformity that creates nonuniform spatial gain distribution in the emitting aperture. Actually, we observed that the lasing action mainly arises from the spots with brightest intensity, as indicated in the inset of Fig.…”

Section: Characteristics Of Electrically Pumped Gan-based Vcselmentioning

confidence: 99%

Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers

Chen

et al. 2009

IEEE J. Select. Topics Quantum Electron.

View full text Add to dashboard Cite

Abstract-This paper reviews the fabrication technology and performance characteristics of optically pumped and electrically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs). The lasing action of optically pumped hybrid GaNbased VCSELs has been observed at room temperature due to the employment of high-quality and high-reflectivity AlN/GaN-based distributed Bragg reflectors in the VCSEL structure. Based on the device structure of the optically pumped hybrid GaN-based VCSELs, we further achieved the lasing action of electrically pumped GaN-based VCSELs under continuous-wave operation at 77 K. The laser has a threshold injection current of 1.4 mA and emits a blue wavelength at 462 nm together with a narrow linewidth of about 0.15 nm. The laser beam has a divergence angle of about 11.7• with a polarization ratio of 80%. A very strong spontaneous coupling efficiency of 7.5 × 10 −2 was measured.Index Terms-Distributed Bragg reflector (DBR), GaN, electrical pumping, superlattice, vertical-cavity surface-emitting laser (VCSEL).

show abstract

Microscopic analysis of optical gain in InGaN∕GaN quantum wells

Cited by 71 publications

References 15 publications

Optical gain and saturation behavior in homoepitaxially grown InGaN/GaN/AlGaN laser structures

Optical gain and saturation behavior in homoepitaxially grown InGaN/GaN/AlGaN laser structures

(Al,In)GaN laser diodes in spectral, spatial, and time domain: near-field measurements and basic simulations

Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers

Contact Info

Product

Resources

About