Microscale Characterization of Surface Recombination at the Vicinity of Laser-Processed Regions in c-Si Solar Cells

Abstract

Laser firing processes have emerged as a technologically feasible approach to fabricate local point contacts or local doped regions in advanced high-efficiency crystalline-Si (c-Si) solar cells. In this work we analyze the local impact induced by the laser pulse on the passivation layers, which are commonly present in advanced c-Si solar cell architectures to reduce surface recombination. We use micro-photoluminescence (PL) measurements with a spatial resolution of 7 µm to evaluate the passivation performance at the surroundings of laser processed regions (LPRs). In particular, we have studied LPRs performed on SiCx/Al2O3-and Al2O3-passivated c-Si wafers by an IR (1064 nm) laser. Micro-PL results show that passivation quality of c-Si surface is affected up to about 100 µm away from the LPR border, and that the extension of this damaged zone is correlated to the laser power and to the presence of capping layers. In the final part of the work, the observed decrease in passivation quality is included into an improved 3D simulation model that gives accurate information about the recombination velocities associated to the studied LPRs.

Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices

“…To date, the commercialized solar cells are based on bulk materials of monocrystalline Si and polycrystalline Si, as well as thin films of CdTe, Cu(In,Ga)Se 2 , and tandem amorphous‐Si/microcrystalline‐Si . These first and second generation photovoltaic devices possess excellent photoelectron efficiency and long‐term stability; however, their disadvantages arise from either the toxicity of cadmium metal or the low abundance of indium metal, as well as complex manufacturing protocols .…”