2001
DOI: 10.1016/s0924-4247(01)00559-3
|View full text |Cite
|
Sign up to set email alerts
|

Microprocessor implemented self-validation of thick-film PZT/silicon accelerometer

Abstract: This paper describes a piezoelectric micromachined silicon accelerometer fabricated using a combination of thick-®lm printing and silicon micromachining and introduces a microprocessor implemented self-validation routine for the device. The thick-®lm printed PZT elements act as sensors detecting the de¯ections of the inertial mass and also as actuators capable of performing a self-test routine. The selfvalidation procedure is performed at resonance and therefore, a microprocessor is used to identify the resona… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
11
0

Year Published

2004
2004
2018
2018

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 20 publications
(11 citation statements)
references
References 10 publications
0
11
0
Order By: Relevance
“…The aim of this work is to develop guidelines for the design and manufacture of piezoelectric accelerometers for structural health monitoring. Active materials with larger piezoelectric constants, such as Lead ZirconateTitanate (PZT), can widen the performance gap of piezoelectric accelerometers [11,[18][19][20][21][22][23][24][25][26][27]. Zinc Oxide (ZnO) has also been employed for active piezoelectric film due to its relatively simple and repeatable deposition using single-target RF sputtering, the ability to produce largearea films without pinholes, and proven compatibility with IC (integrated circuit) integration [28][29][30].…”
Section: E T E T E E T T T T T T D E T E Tmentioning
confidence: 99%
“…The aim of this work is to develop guidelines for the design and manufacture of piezoelectric accelerometers for structural health monitoring. Active materials with larger piezoelectric constants, such as Lead ZirconateTitanate (PZT), can widen the performance gap of piezoelectric accelerometers [11,[18][19][20][21][22][23][24][25][26][27]. Zinc Oxide (ZnO) has also been employed for active piezoelectric film due to its relatively simple and repeatable deposition using single-target RF sputtering, the ability to produce largearea films without pinholes, and proven compatibility with IC (integrated circuit) integration [28][29][30].…”
Section: E T E T E E T T T T T T D E T E Tmentioning
confidence: 99%
“…In this work, the authors intend to generate the design guidelines for design and manufacture of piezoelectric accelerometers for structural health monitoring. Active materials with larger piezoelectric constants, such as PZT, can widen the performance gap of piezoelectric accelerometers [34,[37][38][39][40][41][42][43][44][45]. ZnO has also been employed for the active piezoelectric film due to relatively simple and repeatable deposition using single-target RF sputtering, the ability to produce large-area films without pinholes, and proven compatibility with IC integration [46][47][48].…”
Section: Introductionmentioning
confidence: 99%
“…Piezoelectric Pb(Zr x Ti 1−x )O 3 (PZT) thick films have a high coupling factor and show small temperature dependence [3] making them ideal for sensors. Figure 1 shows a schematic drawing of the two MEMS devices of interest, (1) a tri-axial accelerometer, [4,5] and (2) a piezoelectric Micromachined Ultrasonic Transducer (pMUT) [6,7]. The two MEMS devices consist of a PZT thick film between a bottom and top electrode on a beam or membrane structure.…”
Section: Introductionmentioning
confidence: 99%
“…However, screen printed PZT has a rougher surface compared to other deposition techniques due to larger PZT grain sizes which introduces new fabrication challenges with respect to the top electrode formation as most planar processing is optimized for surfaces with a much lower surface roughness. So far most top electrodes on screen printed PZT thick films have been deposited using screen printing resulting in thickness of approximately 10 μm and maximum lateral resolution around 100 μm [4,12,13]. For optimal sensitivity of a MEMS device the top electrode should be as thin as possible, as a thicker top electrode makes a beam or membrane in a MEMS device more stiff.…”
Section: Introductionmentioning
confidence: 99%