Micrometer-Scale Ballistic Transport of Electron Pairs in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>LaAlO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mi>SrTiO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Nanowires

Tomczyk, Michelle; Cheng, Guanglei; Lee, Hyungwoo; Lu, Shicheng; Annadi, Anil; Veazey, Joshua P.; Huang, Mengchen; Irvin, Patrick; Ryu, Sangwoo; Eom, Chang‐Beom; Levy, Jeremy

doi:10.1103/physrevlett.117.096801

Cited by 36 publications

(42 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Over the past few years, various quasi-1D channels with micron-long coherence lengths have been reported [32,33]. The clean limit of a 1D quantum wire is particularly important for investigating Luttinger liquid physics and the nature of electron-electron interactions.…”

Section: Ballistic Transport and Dissipationless Electronic Waveguidesmentioning

confidence: 99%

Physics of SrTiO₃-based heterostructures and nanostructures: a review

et al. 2018

Self Cite

View full text Add to dashboard Cite

1 Overview 1 1.1 Introduction 1 1.1.1 Oxide growth techniques are rooted in search for high-Tc superconductors 2 1.1.2 First reports of interface conductivity 2 1.2 2D physics 2 1.3 Emergent properties of oxide heterostructures and nanostructures 3 1.4 Outline 3 2 Relevant properties of SrTiO3 3 2.1 Structural properties and transitions 3 2.2 Ferroelectricity, Paraelectricity and Quantum Paraelectricity 4 2.3 Electronic structure 5 2.4 Defects 6 2.4.1 Oxygen vacancies 6 2.4.2 Terraces 7 2.5 Superconductivity 7 3 SrTiO3-based heterostructures and nanostructures 8 3.1 Varieties of heterostructures 8 3.1.1 SrTiO3 only 9 3.1.2 LaAlO3/SrTiO3 9 3.1.3 Other heterostructures formed with SrTiO3 10 3.2 Thin-film growth 10 3.2.1 Substrates 10 3.2.2 SrTiO3 surface treatment 11 3.2.3 Pulsed Laser Deposition 11 3.2.4 Atomic Layer Deposition 13 3.2.5 Molecular Beam Epitaxy 14 3.2.6 Sputtering 15 3.3 Device Fabrication 15 3.3.1 "Conventional" photolithography - Thickness Modulation, hard masks, etc. 15 3.3.2 Ion beam irradiation 16 3.3.3 Conductive-AFM lithography 16 4 Properties and phase diagram of LaAlO3/SrTiO3 16 4.1 Insulating state 16 4.2 Conducting state 17 4.2.1 Confinement thickness (the depth profile of the 2DEG) 17 4.3 Metal-insulator transition and critical thickness 18 4.3.1 Polar catastrophe ( electronic reconstruction) 18 4.3.2 Oxygen Vacancies 19 4.3.3 Interdiffusion 20 4.3.4 Polar Interdiffusion + oxygen vacancies + antisite pairs 20 4.3.5 Role of surface adsorbates 21 4.3.6 Hidden FE like distortion - Strain induced instability 21 4.4 Structural properties and transitions 21 4.5 Electronic band structure 22 4.5.1 Theory 22 4.5.2 Experiment 23 4.5.3 Lifshitz transition 24 4.6 Defects, doping, and compensation 25 4.7 Magnetism 25 4.7.1 Experimental evidence 25 4.7.2 Two types of magnetism 27 4.7.3 Ferromagnetism 27 4.7.4 Metamagnetism 28 4.8 Superconductivity 28 4.9 Optical properties 29 4.9.1 Photoluminesce experiments 29 4.9.2 Second Harmonic Generation 29 4.10 Coexistence of superconductivity and magnetism 30 4.11 Magnetic and conducting phases 30 5 Quantum transport in LaAlO3/SrTiO3 heterostructures and microstructures 31 5.1 2D transport 31 5.2 Inhomogeneous Transport 31 5.3 Anisotropic Magnetoresistance 32 5.4 Spin-orbit coupling 32 5.5 Anomalous Hall Effect 34 5.6 Shubnikov-de Haas (SdH) Oscillation 35 5.7 Quantum Hall Effect 37 5.8 Spintronic Effects 38 6 Quantum transport in LaAlO3/SrTiO3 nanostructures 39 6.1 Quasi-1D Superconductivity 39 6.2 Universal conductance fluctuations 40 6.3 Dissipationless Electronic Waveguides 40 6.4 Superconducting Quantum Interference Devices (SQUID) 41 6.5 Electron pairing without superconductivity 41 6.6 Tun...

show abstract

Section: Ballistic Transport and Dissipationless Electronic Waveguidesmentioning

confidence: 99%

Physics of SrTiO₃-based heterostructures and nanostructures: a review

et al. 2018

Self Cite

View full text Add to dashboard Cite

show abstract

“…Despite the general importance of attractive interactions and local pair formation, only very recently has paring been demonstrated at the level of single electrons in a single-electron transistor at the LaAlO 3 /SrTiO 3 (LAO/STO) interface 5 – 7 . Direct evidence was found for pairing at magnetic fields and temperatures significantly beyond the critical values of superconductivity.…”

Section: Introductionmentioning

confidence: 99%

Transport and excitations in a negative-U quantum dot at the LaAlO3/SrTiO3 interface

et al. 2017

View full text Add to dashboard Cite

In a solid-state host, attractive electron–electron interactions can lead to the formation of local electron pairs which play an important role in the understanding of prominent phenomena such as high T c superconductivity and the pseudogap phase. Recently, evidence of a paired ground state without superconductivity was demonstrated at the level of single electrons in quantum dots at the interface of LaAlO3 and SrTiO3. Here, we present a detailed study of the excitation spectrum and transport processes of a gate-defined LaAlO3/SrTiO3 quantum dot exhibiting pairing at low temperatures. For weak tunneling, the spectrum agrees with calculations based on the Anderson model with a negative effective charging energy U, and exhibits an energy gap corresponding to the Zeeman energy of the magnetic pair-breaking field. In contrast, for strong coupling, low-bias conductance is enhanced with a characteristic dependence on temperature, magnetic field and chemical potential consistent with the charge Kondo effect.

show abstract

“…The mechanism for conduction is believed to be controlled by surface protons that are distributed on the LAO surface, 14,15 enabling reconfigurable nanoscale control of the electron gas at the interface with a precision which is typically in the 5-10 nm range (measured at room temperature), but which can be as small as 2 nm. 16 Quantum devices created with this c-AFM lithography technique include single electron transistors (SETs), 17 quantum dots, 18 and Fabry-Perot interferometer cavities, 19 which rely on the ability to control dimensionality into quasi-1D and 0D regimes.…”

confidence: 99%