Micromechanically structurized sensors on GaAs: An integrated anemometer

Fricke, Klaus; Hartnagel, H.L.; Ritter, Steve; Würfl, Joachim

doi:10.1016/0167-9317(92)90421-m

Cited by 12 publications

(4 citation statements)

References 4 publications

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“…Still, micromechanical structures in GaAs have shown yield strengths up to 5 GPa, more than 5 times that of a good construction steel [14]. Some of the reported micromechanical sensors in III-Vs are: pressure sensors [15,16], a fibre optic accelerometer [17], and thermopile devices such as an anemometer, an IR-sensor, and a microwave effect sensor [18][19][20]. Other micromechanical demonstrator structures are an X-Y micro table [21] and piezoelectric tuning forks [22].…”

Section: Introductionmentioning

confidence: 99%

Sacrificial etching of III - V compounds for micromechanical devices

Hjort

1996

J. Micromech. Microeng.

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Sacrificial etching of III - V compounds is reviewed with emphasis on its use in surface micromachining of micromechanical structures. A table is presented with 23 different combinations of stopping layers, sacrificial layers, and etchants for sacrificial etching of GaAs- and InP-based epitaxial heterostructures. Examples of surface micromachined microstructures of III - V compounds are shown, and some possible applications are discussed.

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Section: Introductionmentioning

confidence: 99%

Sacrificial etching of III - V compounds for micromechanical devices

Hjort

1996

J. Micromech. Microeng.

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“…The anisotropy effect can cause as much as 18% difference in the measured surface energy for different crack propagation directions in the same crack plane. We give the anisotropic relationships for E and v in terms of the compliance constants s~ of a cubic crystal where kl = (Im) s + (mn) s + (nl) s [6] k2 = (iI) s + (jm) 2 + (kn) s [7] The compliance constants for Si and GaAs are given in Table I. Equation 4gives the Young's modulus E in the crystallographic direction [Imn], and Eq.…”

Section: Fracture Surface Energy Theorymentioning

confidence: 99%

GaAs Low Temperature Fusion Bonding

Hjort

Ericson

Schweitz

et al. 1994

J. Electrochem. Soc.

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High strength, low temperature fusion bonding of GaAs has been achieved at annealing temperatures between 400 and 420~ in an ambient Ha atmosphere. The reducing effect of H2 on the oxide interlayer is believed to play an important role. The fracture surface energy of the strongest bonds (0.8 J/m 2) is close to that of the bulk material. The tensile fracture strength measured (a~ >-10 MPa) is of the same order as that measured for silicon fusion bonding, hence yielding sufficient strength for most mieromechanical devices. Resistivity measurements as well as XTEM analyses indicate the existence of a thin, insulating layer of unrecovered oxide in the bond zone. Also, the anisotropy dependence of the fracture surface energy is theoretically described. The bonding technique could be useful in GaAs-based sensor applications and micromechanical devices, as well as in 3D-integration.

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“…Several examples have been presented in Si technologies, using membranes, cantilevers and bridges. Investigations have also been made considering GaAs processing technologies in order to take the advantage of high thermal resistance, higher heat capacitance and higher Seebeck coefficient of GaAs and AlGaAs materials [18,39,40,[45][46][47]. The voltage generated by a thermocouple consisting of two junctions of two different conductors at different temperatures (Seebeck effect) can be increased by connecting a number of thermocouples in series to form a thermopile (Fig.…”

Section: Temperature Sensorsmentioning

confidence: 99%

“…According to Senturia and Howe [45], the ideal suites of CAD tools required for MEMS development are [49]:…”

Section: Computer-aided Mems Designmentioning

confidence: 99%

Web-Enabled Knowledge-Intensive Support Framework for Collaborative Design of MEMS

Zha

Mems/Nems

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Micro-Electro-Mechanical Systems (MEMS) design and manufacturing are inherently multi-physical and multi-disciplinary; no single person is able to perform a full development process for a MEM device or system. This chapter presents a web-enabled design platform for collaborative design of MEMS. The proposed web-based distributed object modeling and evaluation framework with client-knowledge server architecture, KS-DMME, allows multi-users/designers in different locations to participate in the same design process. Under this framework, concurrent integrated MEMS design and simulation models can be built using both local and distributed resources, and the design collaboration can be realized by exchanging services between modules based upon CORBA standard communication protocol. To facilitate the rapid construction of the concurrent integrated design models for MEMS, a prototype web-enabled design system, Web-MEMS Designer, is implemented through concurrent integration of multiple distributed and cooperative knowledge sources and software. By use of the developed prototype system, MEMS design and simulation can be carried out simultaneously and intelligently in an integrated but open design environment on the web. A case study of a microgripper design for micro robotic assembly systems is provided to illustrate how designers in different teams and organizations may participate and collaborate in MEMS design.

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Micromechanically structurized sensors on GaAs: An integrated anemometer

Cited by 12 publications

References 4 publications

Sacrificial etching of III - V compounds for micromechanical devices

Sacrificial etching of III - V compounds for micromechanical devices

GaAs Low Temperature Fusion Bonding

Web-Enabled Knowledge-Intensive Support Framework for Collaborative Design of MEMS

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