2002
DOI: 10.1016/s0921-4526(02)00529-x
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Micromechanical electrometry of single-electron transistor island charge

Abstract: We consider the possibility of using a micromechanical gate electrode located just above the island of a single-electron transistor to measure directly the fluctuating island charge due to tunnelling electrons.

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Cited by 1 publication
(7 citation statements)
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“…When the responsivities of S1 and S2 are compared, taking into account the ratios of sense capacitances in each case, these agree well with equation (6). For a large C P , much greater than the sense capacitance (C S ), the responsivity scales with C S .…”
Section: Predictedsupporting
confidence: 65%
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“…When the responsivities of S1 and S2 are compared, taking into account the ratios of sense capacitances in each case, these agree well with equation (6). For a large C P , much greater than the sense capacitance (C S ), the responsivity scales with C S .…”
Section: Predictedsupporting
confidence: 65%
“…A comparison between the measured and predicted values for the responsivity, as summarized in table 2, shows that the two are in reasonably good agreement. Having shown that equation (6) and figure 7 agree very well with experimental data, these can then now be used as reliable reference for designing future electrometers of improved responsivities and charge resolution.…”
Section: Predictedmentioning
confidence: 62%
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