Micromachined on-wafer probes

Reck, Theodore; Chen, L.; Zhang, C.; Groppi, Christopher; Xu, Haidi; Arsenovic, Alexander; Barker, N. Scott; Lichtenberger, Arthur W.; Weikle, Robert M.

doi:10.1109/mwsym.2010.5517580

Cited by 28 publications

(17 citation statements)

References 5 publications

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“…Therefore, the spring constant of the probe is K 1 = 0.65 ± 0.08 mN/µm. Previous measurements have shown that a micromachined silicon chip achieves a low contact resistance of 0.07 Ω at 1 mN per tip [5]. However, higher contact force (>3 mN) may be required to ensure that all three tips on the GSG probe simultaneously contact to the CPW probing pads with low resistance, given possible non-planarity of the probe with the Device Under Test (DUT).…”

Section: Mechanical Testmentioning

confidence: 99%

“…A micromachined on-wafer probe has previously been demonstrated at W-band [5]. This probe is based on a microfabrication process that produces circuits on ultra-thin silicon substrates between 15 µm and 3 µm thick [6].…”

Section: Introductionmentioning

confidence: 99%

“…This paper presents the repeatability of the mounting process and the lifetime of the probe. In [5], two designs were evaluated that couple between waveguide and the probe tips with either a microstrip or a coaxial transmission line. The results presented in this paper reflect the microstrip-based design, but both designs share the same mechanical design, so the coaxial-based design should exhibit similar behavior.…”

Section: Introductionmentioning

confidence: 99%

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Terahertz micromachined on-wafer probes: Repeatability and robustness

Chen

Zhang

Reck

et al. 2011

2011 IEEE MTT-S International Microwave Symposium

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Abstract-Although progress has been made in the development of submillimeter-wave monolithic integrated circuits, the evaluation of these circuits still relies on test fixtures, which makes testing expensive and time consuming. Based on a W-band prototype, a micromachined on-wafer probe covering frequencies 500-750 GHz is built to simplify submillimeter-wave integrated circuits testing. This paper demonstrates the repeatability and the robustness of this terahertz micromachined on-wafer probe.

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Section: Mechanical Testmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Terahertz micromachined on-wafer probes: Repeatability and robustness

Chen

Zhang

Reck

et al. 2011

2011 IEEE MTT-S International Microwave Symposium

Self Cite

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show abstract

“…Previous measurements have shown that a micromachined silicon chip achieves a low contact resistance of 0.07 Ω at 1 mN per tip [28]. However, higher contact force (>3 mN) may be required to ensure that all three tips on the GSG probe simultaneously contact to the CPW probing pads with low resistance, given possible non-planarity of the probe with the DUT, as shown in Section 2.3.…”

Section: S -Parameter Measurement Resultsmentioning

confidence: 99%

Micromachined Millimeter- and Submillimeter-wave Circuits for Test and Integration

Chen¹

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The terahertz spectrum is critical to a wide range of scientific applications, from radio astronomy to remote sensing. However, due to the cost, size and weight of terahertz systems, the terahertz frequency range remains one of the least explored and utilized regions of the electromagnetic spectrum. To reduce the size, weight and cost of terahertz components, one of the solutions is to fabricate high density integrated circuits.Although progress has been made in the development of submillimeter-wave monolithic integrated circuits, the evaluation of these circuits still relies on test fixtures, which makes testing expensive and time consuming. A micromachined on-wafer probe covering frequencies 500-750 GHz has been demonstrated in this work to simplify submillimeterwave integrated circuits testing.This work also presents the design, simulation and measurement of a vertical RF interconnect with mechanical fit for three-dimensional heterogeneous integration, which is one of the major technologies for system miniaturization. The mechanical fit is a flip-chip strategy employing SU-8, an ultra-thick photoresist, to realize interlocking structures that prevent misalignment during assembly and increase the reliability of the interconnects. To determine the electromagnetic characteristics, such as insertion loss and the coupling between face-to-face chips, different test structures were fabricated and measured.To my parents for their long-term encouragement and believing in me.

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“…Reck [46], Chen [47] and Zhang, and the twist fabrication and simulation process originated from efforts by Stanec [48], Chen [49] and Yu [50]. This chapter documents and describes the structure and fabrication of the micromachined probes for diode characterization.…”

Section: Introductionmentioning

confidence: 99%

Submillimeter-Wave Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Membranes

Alijabbari¹

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GaAs Schottky diodes are the central component of Terahertz (THz) metrology instrumentation. The frequency translating property of the Schottky diode is used in ground and space based observatories and for characterization of other THz devices. As detectors, GaAs Schottky diodes are used for measuring signal power levels, as mixers they are used in heterodyne receivers, and as variable capacitors they are used in frequency multipliers.The focus of this dissertation is the integration of GaAs Schottky diodes on silicon-on-insulator (SOI) substrate carriers to better control the device parasitics and to accommodate assembly of fully integrated diode-based circuits. During research into this process, a unique quasi-vertical diode geometry was developed in which the ohmic contact lies directly below the Schottky anode. While similar in concept to the first whisker contacted Schottky diodes, the quasi-vertical diode is nevertheless a planar device that is readily integrated with other components supported by the SOI substrate, including beamleads for electrical connection. To illustrate the advantages of this technology, 40-to-80 GHz doublers and a new 40-to-160 GHz quadrupler were designed and implemented using the quasi-vertical diodes and heterogeneous integration methods developed in this research. These multipliers are the first demonstrated fully-integrated GaAs varactor circuits fabricated on SOI, yielding record performance in multiplication efficiency, and demonstrating the benefits of the novel diode architecture and substrate replacement technology.ii

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Micromachined on-wafer probes

Cited by 28 publications

References 5 publications

Terahertz micromachined on-wafer probes: Repeatability and robustness

Terahertz micromachined on-wafer probes: Repeatability and robustness

Micromachined Millimeter- and Submillimeter-wave Circuits for Test and Integration

Submillimeter-Wave Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Membranes

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