Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device

Lalinský, T.; Hudek, P.; Vanko, G.; Dzuba, J.; Kutiš, Vladimı́r; Srnänek, R.; Choleva, Pavlina; Vallo, Martin; Drık, M.; Matay, L.; Kostič, I.

doi:10.1016/j.mee.2012.06.014

Cited by 30 publications

(16 citation statements)

References 8 publications

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“…The AlN interfacial layer served as the etch‐stop layer of the trench‐free silicon etching . Low‐frequency pulsing bias power was used to minimize destructive etching effects at the membrane base .…”

Section: Methodsmentioning

confidence: 99%

Diamond-coated three-dimensional GaN micromembranes: Effect of nucleation and deposition techniques

Ižák

Vanko

Babchenko

et al. 2015

Phys. Status Solidi B

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In this work, we present technological issues in the deposition of polycrystalline diamond films as a backside heat spreader for GaN membranes. We compared three nucleation techniques, including standard ultrasonic seeding by diamond powder (DP) in deionized water, drop-off technique with DP in solution and polymer based nucleation by polyvinyl alcohol (PVA) polymer composite containing fine grained DP. The diamond growth was performed in a hot filament or microwave plasma chemical vapor deposition system. We found that standard nucleation techniques (ultrasonic seeding or immersing in diamond powder solution) resulted in damaging or cracking of GaN membranes, or low nucleation efficiency in the Z-depth of the structures. Implementation of a novel nucleation technique with PVA polymer composite containing diamond powder led to coating of both bottom and top parts of the membrane including side walls. The coverage homogeneity was evaluated by scanning electron microscopy and Raman spectroscopy. The obtained results indicate that the efficiency (and/or nucleation density) of the polymer-based technique is comparable with standard ultrasonic seeding and could be used in preference for nucleation of soft and fragile substrates.

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Section: Methodsmentioning

confidence: 99%

Diamond-coated three-dimensional GaN micromembranes: Effect of nucleation and deposition techniques

Ižák

Vanko

Babchenko

et al. 2015

Phys. Status Solidi B

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“…The III-V nitrides is also having a high potential for monolithic integration [ 21 ]. There have been various studies on the AlGaN/GaN based pressure sensors for room temperature sensing applications [ 22 , 23 ]. In this article, we have investigated high temperature pressure sensing behavior of AlGaN/GaN based devices and its electrical properties with the applied pressure have been studied with the temperature.…”

Section: Introductionmentioning

confidence: 99%

High Temperature AlGaN/GaN Membrane Based Pressure Sensors

2018

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A highly sensitive Gallium Nitride (GaN) diaphragm based micro-scale pressure sensor with an AlGaN/GaN heterostructure field effect transistor (HFET) deflection transducer has been designed and fabricated for high temperature applications. The performance of the pressure sensor was studied over a pressure range of 20 kPa, which resulted in an ultra-high sensitivity of ~0.76%/kPa, with a signal-to-noise ratio as high as 16 dB, when biased optimally in the subthreshold region. A high gauge factor of 260 was determined from strain distribution in the sensor membrane obtained from finite element simulations. A repeatable sensor performance was observed over multiple pressure cycles up to a temperature of 200 °C.

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“…A double side micromachining technique was shown to be suitable for the preparation of FBAR [27] and metal-semiconductor-metal ultraviolet photodetectors [66][67][68] The micromachining technique was also applied for the preparation of 1.9-µ m-thick AlGaN/GaN membrane structures patterned on silicon substrate as sensing element of pressure sensors based on a circular high electron mobility transistor (C-HEMT) (Figures 7a and7b) [69]. The front-side processing of the C-HEMT device is combined with bulk silicon micromachining in this technology.…”

Section: Fabrication Of Gan Membranes and Device Structures By Means Of Double-side Micromachining Processing With Uv Lithographymentioning

confidence: 99%

GaN nanostructuring for the fabrication of thin membranes and emerging applications

Tiginyanu¹,

Ursaki²

2014

Turk J Phys

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Abstract:We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional methods of wet etching undercutting for membrane manufacturing, technologies applied for the fabrication of photonic crystal structures based on GaN nanomembranes, double side processing, and surface charge lithography. Prospects of membrane applications in photonic devices, sensors, and microoptoelectromechanical and nanoelectromechanical systems are discussed, taking into account the advantageous piezoelectric, optical, and mechanical properties of GaN and related III-V nitride materials.

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Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device

Cited by 30 publications

References 8 publications

Diamond-coated three-dimensional GaN micromembranes: Effect of nucleation and deposition techniques

Diamond-coated three-dimensional GaN micromembranes: Effect of nucleation and deposition techniques

High Temperature AlGaN/GaN Membrane Based Pressure Sensors

GaN nanostructuring for the fabrication of thin membranes and emerging applications

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