2001
DOI: 10.1088/0034-4885/64/10/203
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Micromachined infrared detectors based on pyroelectric thin films

Abstract: The state of the art of thin-film pyroelectric infrared (IR) detectors is reviewed covering device physics, material performance, micro-fabrication and device examples. Emphasis is given to special issues related to thin films, such as small heat capacities and the substrate influence on the pyroelectric properties. For the latter, an overview of the hitherto reported values is given. Examples of micromachined IR detectors based on pyroelectric thin films are described. The ultimate limit of micromachined ther… Show more

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Cited by 265 publications
(149 citation statements)
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References 104 publications
(119 reference statements)
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“…This gives rise to one of the most frequently used parameters, the area-normalized (or specific) detectivity, To appreciate typical magnitudes of the responsivity and detectivity of a pyroelectric, consider a 0.01 mm 2 lanthanummodified lead titanate (PLT) element supported on a thin ceramic membrane. 11 The maximum voltage responsivity was calculated to be about 40 000 V/W at a modulation frequency of 1 Hz. The maximum current responsivity was 50 mA/W and the maximum D* was 6.4 × 10 8 cm Hz 1/2 /W at 5 Hz.…”
Section: Box 2 Characterization Of Pyroelectric Elementsmentioning
confidence: 99%
“…This gives rise to one of the most frequently used parameters, the area-normalized (or specific) detectivity, To appreciate typical magnitudes of the responsivity and detectivity of a pyroelectric, consider a 0.01 mm 2 lanthanummodified lead titanate (PLT) element supported on a thin ceramic membrane. 11 The maximum voltage responsivity was calculated to be about 40 000 V/W at a modulation frequency of 1 Hz. The maximum current responsivity was 50 mA/W and the maximum D* was 6.4 × 10 8 cm Hz 1/2 /W at 5 Hz.…”
Section: Box 2 Characterization Of Pyroelectric Elementsmentioning
confidence: 99%
“…One mode operates at a temperature below (but typically near) the Curie temperature T C of the ferroelectric where the variation in the spontaneous polarization as a function of temperature is large. In the dielectric bolometer mode, one works slightly above T C in the paraelectric state of the ferroelectric and with an applied bias field to induce polarization [5][6][7][8][9]. In either case, it is required that the ferroelectric is deposited in a thin film form on an IC compatible substrate.…”
Section: Application Of Electrothermal Properties Of Ferroelectricsmentioning
confidence: 99%
“…2,3 Dielectrics whose structures possess both a unique axis of symmetry and lack a center of symmetry (i.e., that are "polar") display a spontaneous polarization (PS) and will exhibit a PE due to temperature-induced changes in PS.…”
mentioning
confidence: 99%