2008
DOI: 10.1007/s00542-007-0510-2
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Microlens array fabrication by backside exposure using Fraunhofer diffraction

Abstract: In UV-lithography, a gap between photoresist and UV-mask results in diffraction. Fresnel or near-field diffraction in thick positive and negative resists for microstructures resulting from a small gap in contact or proximity printing has been previously investigated. In this work, Fraunhofer or far-field diffraction is utilized to form microlens arrays. Backside-exposure of SU-8 resist through Pyrex 7740 transparent glass substrate is conducted. The exposure intensity profile on the interface between Pyrex 774… Show more

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Cited by 11 publications
(8 citation statements)
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References 6 publications
(5 reference statements)
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“…The cause for this not clear but appears to be related to the dose. Similar effects have also been observed by others (Song et al 2007b). The shape and size of micro-nozzles depend on dosage, aperture size, zone plate size, distance between the mask, the resist and exposure wavelength.…”
Section: Discussionsupporting
confidence: 70%
“…The cause for this not clear but appears to be related to the dose. Similar effects have also been observed by others (Song et al 2007b). The shape and size of micro-nozzles depend on dosage, aperture size, zone plate size, distance between the mask, the resist and exposure wavelength.…”
Section: Discussionsupporting
confidence: 70%
“…This approach to beam deflection, at the microscopic scale, is similar to previous work where micro-optical elements have been mounted onto finished laser arrays [9,10,11], but we are not aware of a greyscale fabrication method being employed to integrate micro-elements directly onto the device. Integration of micro-optic elements has been achieved before but has involved alternate fabrication techniques, further to the device construction [12,13].…”
Section: Introductionmentioning
confidence: 77%
“…Since near-UV light (wavelength: 350-400 nm) is the optimum source for use with SU-8 photoresist and synchrotron radiation is very expensive and not widely available, UV light has been developed to supersede synchrotron radiation in lithography applications. In recent years, SU-8 photoresist has been applied to various systems such as lab-on-chip devices [2][3][4], optical devices [5][6][7][8][9] and drug delivery systems [10].…”
Section: Introductionmentioning
confidence: 99%
“…The attenuation of the light intensity generates microstructure with a larger head and a smaller bottom (the so-called 'big head effect') [12,13,15,16,19] in conventional proximity lithography. In order to overcome the big head effect, researchers have developed many lithography techniques such as backside exposure lithography [9,10,16,[20][21][22][23][24][25][26], reflection lithography [15,19], h-line and g-line lithography [14,18] and a lithography technique in which the gap between the photomask and the photoresist is filled with glycerol [13]. The use of h-line and g-line sources successfully reduced the attenuation of the light intensity and the diffraction effect, but the microstructure profile was not controlled.…”
Section: Introductionmentioning
confidence: 99%