Microhardness testing procedure and effect of composition on the microhardness of brittle materials

Vigdorovich, V. N.; Nashel'skii, A Ya

doi:10.1007/bf01111826

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1984

1992

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“…8 Dislocations generated by plastic deformation, therefore, lie on {111} planes with |<110> Burgers vectors. 9 They found that a microhardness-composition curve does not show a maximum, as is usually found in ordinary metallic alloy systems. In Fig.…”

mentioning

confidence: 91%

Mechanical, Elastic, and Lattice Vibrational Properties

Adachi

1992

Physical Properties of III‐V Semiconductor Compounds

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mentioning

confidence: 91%

Mechanical, Elastic, and Lattice Vibrational Properties

Adachi

1992

Physical Properties of III‐V Semiconductor Compounds

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Hardness anisotropy of III-V semiconducting compounds and alloys

Watts

Willoughby

1984

Journal of Applied Physics

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Knoop hardness anisotropy measurements have been carried out on {100} samples of InP, both undoped and doped with sulfur to 1019 cm−3, InGaAs and InGaAsP, the latter two being in layer form. The results show that the ternary and quaternary alloys share similar hardness anisotropy characteristics characterized by two maxima at about 20° from the 〈110〉 direction, and a minimum close to the 〈100〉 direction, whereas InP shows a single maximum near the 〈100〉 direction and two minima about 6–8° from 〈110〉. Sulfur doping increases the general hardness of InP, but the shape of the curve is maintained. The relative hardness curves are discussed in relation to deformation mechanisms.

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Mechanical property and dislocation dynamics of GaAsP alloy semiconductor

et al. 1989

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The mechanical behavior of GaAsP alloy semiconductor was investigated by means of compressive deformation and compared with those of GaAs and GaP. The nature of collective motion of dislocations during deformation was determined by strain-rate cycling tests. The dynamic characteristics of dislocations in GaAsP were found to be similar to those in elemental and compound semiconductors such as Si, Ge, GaAs, and GaP. An alloy semiconductor has a component of the flow stress that is temperature-insensitive and is absent in compound semiconductors.

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Microhardness testing procedure and effect of composition on the microhardness of brittle materials

Cited by 3 publications

References 2 publications

Mechanical, Elastic, and Lattice Vibrational Properties

Mechanical, Elastic, and Lattice Vibrational Properties

Hardness anisotropy of III-V semiconducting compounds and alloys

Mechanical property and dislocation dynamics of GaAsP alloy semiconductor

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