Mechanical property and dislocation dynamics of GaAsP alloy semiconductor

Yonenaga, Ichiro; Sumino, Kôji; Izawa, G.; Watanabe, Hisao; Matsui, Junji

doi:10.1557/jmr.1989.0361

Cited by 20 publications

(6 citation statements)

References 16 publications

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“…26) Similar alloying effect in the yield strength has been observed commonly in alloy semiconductors GaAsP 27) and InAsP. 28) …”

Section: Yield Strengthsupporting

confidence: 53%

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Hardness, Yield Strength, and Dislocation Velocity in Elemental and Compound Semiconductors

Yonenaga

2005

Mater. Trans.

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Current knowledge on macroscopic plasticity indications, i.e., hardness and yield strength, and on microscopic indication, i.e., velocity of individual dislocations, in elemental and IV-IV, III-V, and II-VI compound semiconductors including GaN and ZnSe are reported and discussed on their mutual correlations. The Vickers hardness of the semiconductors can provide conventional information on the material plasticity in a wide temperature range up to their melting points over a wide range of size scales in various material forms. Hardness H v in diamond-and sphalerite-type semiconductors has a universal relationship on their temperature dependence similar to the yield strength y with a relation H v ¼ ð70{100Þ y in the low temperature region. Yield strength obtained by normal tensile or compression tests are expressed by an experimental equation as a function of the strain rate and temperature. The velocities of various types of dislocations measured directly in several semiconductors are described with an empirical equation as a function of the stress and the temperature. Through the analysis of yield strength data in terms of the collective motion of dislocations during the plastic deformation, the dislocation motion, rate-controlling plastic deformation, are deduced. The activation energy for dislocation motion has a linear relation to the band gap energy, depending on the types of semiconductors, elemental, III-V compounds, and II-VI compounds.

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“…26) Similar alloying effect in the yield strength has been observed commonly in alloy semiconductors GaAsP 27) and InAsP. 28) …”

Section: Yield Strengthsupporting

confidence: 53%

“…Over the whole composition range of GeSi alloys, the yield stress shows the maximum around x ¼ 0:5 and is dependent on the composition as proportional to xð1 À xÞ. 26) Similar alloying effect in the yield strength has been observed commonly in alloy semiconductors GaAsP 27) and InAsP. 28) …”

Section: Yield Strengthmentioning

confidence: 60%

Hardness, Yield Strength, and Dislocation Velocity in Elemental and Compound Semiconductors

Yonenaga

2005

Mater. Trans.

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“…We identify two key components that enable the formation of misfit dislocations: lattice hardening in the active region and tensile stress in the film from thermal expansion mismatch. We further identify that the mechanical hardening we observe is in part a result of semiconductor alloy hardening [28,29] in the DWELL.…”

mentioning

confidence: 53%

Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon

Selvidge

Norman

Hughes

et al. 2020

Applied Physics Letters

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Growing III-V semiconductor lasers directly on silicon circuitry will transform information networks. Currently, dislocations limit performance and lifetime even in defect tolerant InAs quantum-dot (QD)-based devices. Although the QD layers are below the critical thickness for strain relaxation, they still contain long, previously unexplained misfit dislocations which lead to significant non-radiative recombination. This work offers a mechanism for their formation, demonstrating that the combined effects of thermal-expansion mismatch between the III-V layers and silicon and precipitate and alloy hardening effects in the active region generate the misfit dislocations during sample cooldown following growth. These same hardening effects can be leveraged to mitigate the very problem they create. The addition of thin, strained, indium-alloyed trapping layers displaces 95% of the misfit dislocations from the QD layer, in model structures. In full lasers, performance benefits from adding trapping layer now both above and below the QD layers include a twofold reduction in lasing threshold currents and a threefold increase in output powers. These improved structures may finally lead to fully integrated, commercially viable siliconbased photonic integrated circuits. MAINSilicon-based photonic integrated circuits will dramatically increase data network bandwidth and energy efficiency and enable new paradigms in chip-scale sensing, detection, and ranging. Direct crystal-growth methods integrating III-V semiconductor lasers with silicon promise cost-effectiveness and scalability, [1] however, fabricating reliable, highperformance GaAs-or InP-based lasers on silicon has proven challenging. [2][3][4] Lattice constant mismatch between the silicon substrate and III-V film generates dislocation line defects, including 'threading' dislocations, which rise upward through the film. [4] Where they intersect the device's active region, they facilitate non-radiative recombination, degrading performance. The energy released causes dislocations to lengthen during device operation, a run-away degradation process ending in device failure. [2,[5][6][7] Despite decades of work to reduce threading dislocation densities to 10 6 -10 7 cm -2 (refs [8-10]) [8][9][10] and to develop dislocation-tolerant active materials such as InAsquantum dots (QDs) in quantum wells (QW) (dots in a well or DWELL), [11][12][13][14][15][16][17] threading dislocations continue to stifle the development of commercially viable III-V lasers on Si. [7,18,19] We have recently identified the root of this contradiction using plan-view scanning transmission electron microscopy (PV-STEM): unexpected dislocations found lying flat along the uppermost and lowermost QD layers, in even record lifetime QD lasers. [20,21]

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“…Additionally, it is assumed that the higher As fraction (nominally 17%), will result in higher glide velocity, following the general aforementioned trend between GaAs and GaP . It is possible that solid solution strengthening (alloy hardening) may counteract this trend, but there is insufficient reported evidence at present to make a conclusive determination either way, − and it is expected that the higher local stresses should nonetheless still provide enhanced glide. Because a material with equivalent tensile strain to fully balance the GaAs 0.17 P 0.83 layers was not readily available (and thus GaP was used), the CSS layers were kept relatively thin to minimize the total compressive stress and risk of runaway dislocation introduction.…”

Section: Methodsmentioning

confidence: 99%

Reduced Dislocation Introduction in III–V/Si Heterostructures with Glide-Enhancing Compressively Strained Superlattices

Boyer

Blumer

et al. 2020

Crystal Growth & Design

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The novel use of a GaAs y P1–y /GaP compressively strained superlattice (CSS) to provide enhanced control over misfit dislocation (MD) evolution and threading dislocation density (TDD) during GaP/Si metamorphic heteroepitaxy is demonstrated. Insertion of the CSS just after critical thickness, and thus prior to substantial dislocation introduction, is found to yield significantly reduced TDD in relaxed, 500 nm thick, n-type GaP/Si versus comparable control samples. The impact of CSS period count on average TDD and the overall dislocation network morphology was examined, supported by quantitative microstructural characterization, revealing a nearly 20× relative TDD reduction (to (2.4 ± 0.4) × 106 cm–2) with a 3-period CSS structure. A similarly low TDD ((3.0 ± 0.6) × 106 cm–2) is maintained when the resultant n-GaP/Si virtual substrate is used for the growth of a subsequent n-type GaAs0.75P0.25-terminal GaAs y P1–y step-graded metamorphic buffer. Although the physical mechanism for TDD reduction provided by these structures is not yet entirely understood, this initial work suggests that enhanced glide dynamics of MDs at or within the CSS placed early in the growth leads to a reduction in the total number of dislocations introduced overall, as opposed to annihilation-based reduction that occurs in conventional strained-layer superlattice dislocation filter approaches.

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Mechanical property and dislocation dynamics of GaAsP alloy semiconductor

Cited by 20 publications

References 16 publications

Hardness, Yield Strength, and Dislocation Velocity in Elemental and Compound Semiconductors

Hardness, Yield Strength, and Dislocation Velocity in Elemental and Compound Semiconductors

Defect filtering for thermal expansion induced dislocations in III–V lasers on silicon

Reduced Dislocation Introduction in III–V/Si Heterostructures with Glide-Enhancing Compressively Strained Superlattices

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