Microhardness in Pure and Doped GaSb

Plaza, J.L.; Diéguez, E.

doi:10.1002/(sici)1521-396x(199908)174:2<361::aid-pssa361>3.0.co;2-r

Cited by 4 publications

(4 citation statements)

References 12 publications

(10 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

Section: Resultsmentioning

confidence: 99%

“…From this analysis, we also observe the bulk modulus of a value of 50.68 GPa and Young's modulus of a value of 80.56 GPa, which is approximately the same as the previously reported experimental and theoretical study. [6,22,23] We developed a supercell (1 Â 2 Â 1) by extending it in the Yaxis using the volume-optimized parameters. In the process of the supercell formation, the space group of the GaSb supercell changes to 111 P-42 m due to the asymmetry in structure.…”

Section: Structural Propertiesmentioning

confidence: 99%

See 1 more Smart Citation

DFT Study about the Effect of Doping on the Properties of GaSb Material and Designing of High‐Efficiency Infrared Photodetector

Bhandari,

Yadav,

Singh

et al. 2023

Physica Status Solidi (b)

View full text Add to dashboard Cite

The gallium antimonide (GaSb) material has very attractive electronic and optoelectronic properties which are suitable for next‐generation infrared (IR) photodetector applications. In this work, properties of undoped GaSb material such as density of states, bandstructure, electron density, absorption coefficient, dielectric function, refractive index, and extinction coefficient are calculated using density‐functional theory (DFT). Moreover, the effects of doping with Ge, Sn, and Zn elements on these properties of GaSb material are investigated. It is found that undoped GaSb material exhibits a direct gap of ≈0.72 eV. Among different doping elements, Ge‐doped GaSb produces a very significant enhancement in optical properties. The Ge‐doped GaSb demonstrates a four times higher absorption coefficient in comparison to undoped GaSb in the IR region at 0.8 eV photon energy. GaSb‐based photodetector device is designed using the Solar Cell Capacitance Simulator (SCAPS) 1D tool. The efficiency of the designed photodetector with optimum thicknesses and doping of different layers is found to be improved from 21.34% to 25.91% after incorporating the absorption data set obtained from the DFT calculations. Additionally, the photodetector with optimum parameters demonstrates maximum responsivity of value ≈0.31 A W−1. In the previous findings, it is demonstrated that GaSb is a very suitable material for next‐generation IR photodetector applications.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Structural Propertiesmentioning

confidence: 99%

DFT Study about the Effect of Doping on the Properties of GaSb Material and Designing of High‐Efficiency Infrared Photodetector

Bhandari,

Yadav,

Singh

et al. 2023

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…The calculated values of H = 5.19 ± 0.25 GPa and Fig. 1b) are consistent with the earlier data that were obtained by means of microindentation equipment [12]. Fig.…”

Section: Resultsmentioning

confidence: 99%

Elastic-Plastic Transition in MBE-Grown GaSb Semiconducting Crystal Examined by Nanoindentation

et al. 2016

View full text Add to dashboard Cite

The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E = 83.07 ± 1.78 GPa), hardness (H = 5.19 ± 0.25 GPa) and "true hardness" (HT = 5.73 ± 0.04 GPa). The registered pop-in event which indicates the elastic-plastic transition in GaSb crystal points towards the corresponding yield strength (σY = 3.8 ± 0.1 GPa). The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept.

show abstract

“…Following this principle the static load of indenter for semiconductors is generally not exceeding 200 g [11]. A few reports on microhardness of GaSb and its related alloys are available in the literatures [12][13][14][15][16] concentrations greatly influence microhardness. In this study we are presenting the results of Vickers microhardness of GaNiSb at room temperature with different Ni concentrations varying between 0.003 and 10%.…”

Section: Introductionmentioning

confidence: 99%