Effect of Ni concentrations on the microhardness of GaNiSb ternary alloys

Kamilla, Sushanta Kumar; Samantaray, B. K.; Basu, S.

doi:10.1016/j.jallcom.2005.06.074

Cited by 7 publications

(3 citation statements)

References 15 publications

(18 reference statements)

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“…Both undoped and Ni doped GaSb crystals were grown at the same growth conditions. The total process of maintaining the temperature profile of the vertical Bridgman growth technique to growing ingots from the synthesized charges has been well explained by us earlier (Sushanta K. Kamilla, Samantaray, & Basu, 2006).Then the ingots were taken out by breaking the ampoules without any sticking problem to the wall for further processing and characterizations. Ingots of nearly 4cm length and 0.8cm diameter were obtained as shown in Figure 1.…”

Section: Growth and Simulationmentioning

confidence: 99%

“…Therefore, to study the ideal behavior of Ni doped GaSb, inclusion of these models to the simulated structure was necessary. Apart from these, model for band-gap narrowing (BGN model) is also essential to include since the band-gap variation is dependent on intrinsic concentration, which in turn depends on temperature (Sushanta K. Kamilla et al, 2006), (Stollwerck, 2000). Thus, these three models Auger recombination, Shockley-Read-Hall (SRH) and Band-gap narrowing (BGN)play an important role in thi simulation for the electrical characterizations of the Ni doped GaSb structured sample.…”

Section: Fig 1 Photograph Of Grown Ni Doped Gasb Ingotmentioning

confidence: 99%

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Experimental and Simulation Analysis of Thermal Vertical Directional Solidification Grown Ni Doped Bulk GASB

Kamilla*,

Ali

2019

IJITEE

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Due to high hole mobility, p-GaSb is an attractive III-V semiconducting material for high performance p-channel metal-oxide semiconductor field effect transistor (p-MOSFET). For that growth of undoped and Ni doped GaSb bulk crystal by thermal vertical directional solidification has been reported in this paper. Both structural and electrical characterization was carried out for both the samples. X-ray diffraction (XRD) analysis confirms that the compound grown is polycrystalline in nature which has been supported by scanning electron microscope (SEM) image. The carrier charge density and mobility were measured by Hall Effect measurement in the temperature range 78K and 300K. From the sign of Hall co-efficient the grown material was confirmed p-type. The Current-Voltage (I-V) characteristic was studied for the sample i.e. experimentally grown and also simulated using TCAD at 78K and 300K. The temperature dependence of the hole mobility were also investigated by TCAD tool using the models Auger recombination, Shockley-Read-Hall (SRH) and Band-gap narrowing (BGN). Comparison of experimental and simulated temperature dependencies of mobility shows good agreement, while their difference at some points suggests the contribution of compensating impurities.

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Section: Growth and Simulationmentioning

confidence: 99%

Section: Fig 1 Photograph Of Grown Ni Doped Gasb Ingotmentioning

confidence: 99%

Experimental and Simulation Analysis of Thermal Vertical Directional Solidification Grown Ni Doped Bulk GASB

Kamilla*,

Ali

2019

IJITEE

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“…Figure 8 shows the plot of micro-hardness as a function of heat treatment temperature for different phases formed in the sample. For an ideal homogeneous ternary alloy A 1-x B x C, the microhardness variation with x is empirically described by [33,34];…”

Section: Thermopower and Figure Of Merit Of The Samplesmentioning

confidence: 99%

Thermal and mechanical properties of La–Al–Sb alloys

Altın

Öz

Demirel

et al. 2014

J Mater Sci: Mater Electron

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We fabricated La-Al-Sb alloy by arc melter system and the fabrication conditions were described in detail. Microstructural analyses were performed and it was found that LaSb, Al 11 La 3 Al 4 La, AlLa 3 and Sb phases formed for different heat treatment conditions. The resistivity results showed the metallic and semiconducting type behavior depending on heat treatment temperatures. The thermal-conductivity measurement was performed in the range of 2-300 K and the data were analyzed by the sum of lattice and carrier components. The linear temperature dependence of thermo power indicates metallic type characteristic of the samples. The micro-hardness values of the phases in the samples were analyzed and it was found that there are two different hardness regions in the samples.

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Structural, electronic, mechanical and phonon properties of half-Heusler GaNiSb, InNiSb and InPdSb alloys via first-principles calculations

John

Rajendran

2023

Computational Condensed Matter

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Effect of Ni concentrations on the microhardness of GaNiSb ternary alloys

Cited by 7 publications

References 15 publications

Experimental and Simulation Analysis of Thermal Vertical Directional Solidification Grown Ni Doped Bulk GASB

Experimental and Simulation Analysis of Thermal Vertical Directional Solidification Grown Ni Doped Bulk GASB

Thermal and mechanical properties of La–Al–Sb alloys

Structural, electronic, mechanical and phonon properties of half-Heusler GaNiSb, InNiSb and InPdSb alloys via first-principles calculations

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