Experimental and Simulation Analysis of Thermal Vertical Directional Solidification Grown Ni Doped Bulk GASB
Sushanta K. Kamilla*,
Farida A. Ali
Abstract:Due to high hole mobility, p-GaSb is an attractive III-V semiconducting material for high performance p-channel metal-oxide semiconductor field effect transistor (p-MOSFET). For that growth of undoped and Ni doped GaSb bulk crystal by thermal vertical directional solidification has been reported in this paper. Both structural and electrical characterization was carried out for both the samples. X-ray diffraction (XRD) analysis confirms that the compound grown is polycrystalline in nature which has been support… Show more
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