Microgun-pumped semiconductor laser

Molva, E.; Accomo, R.; Labrunie, G.; Cibert, J.; Bodin, C.; Dang, Le Si; Feuillet, G.

doi:10.1063/1.108581

Cited by 42 publications

(12 citation statements)

References 5 publications

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“…The lowest threshold achieved by a microgun pumped semiconductor laser in the visible range was a few kW/cm 2 , using low-energy ͑ϳ10 keV͒ electrons produced by field emissive microtips. 3,4 A miniaturization down to a few cm 3 using flat panel displays packaging and vacuum technology would make the device very compact and portable.…”

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confidence: 99%

Cathodoluminescence study of carrier diffusion in AlGaN

Barjon

Brault

Daudin

et al. 2003

Journal of Applied Physics

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This article presents a method to estimate the carrier diffusion length in the optical waveguide region of a separate confinement heterostructure (SCH) semiconductor laser. The electron incident energy dependence of waveguide and active region cathodoluminescence yields are compared with a Monte Carlo simulation of ionization processes. This procedure is applied to a SCH consisting of GaN quantum dots inserted in an Al0.27Ga0.73N/AlN optical waveguide grown by plasma assisted molecular-beam epitaxy on 6H–SiC. A diffusion length of 7.5 nm is estimated in AlGaN material at room temperature.

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Cathodoluminescence study of carrier diffusion in AlGaN

Barjon

Brault

Daudin

et al. 2003

Journal of Applied Physics

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“…Sufficient progress in the development of EBP lasers has been achieved using semiconductor heterostructures as the laser active elements instead of bulk materials. The lasing with microgun excitation both in infrared at RT and in blue-green spectral region at cryogenic temperatures have been demonstrated [4,5]. Fabrication of EBP blue-green RT lasers based on alternately-strained superlattice waveguide with the value of threshold current density as low as 0.8 A/cm2 and pulse output power as high as 9 W has been recently reported [6,7].…”

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confidence: 97%

High‐efficiency electron‐beam pumped green semiconductor lasers based on multiple CdSe quantum disk sheets

Зверев

Sorokin

Sedova

et al. 2005

phys. stat. sol. (c)

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We report on room temperature operation of green electron beam pumped semiconductor lasers based on multiple ZnSe quantum wells with CdSe quantum disk sheets, embedded in the ZnSSe/ZnSe alternatelystrained superlattice waveguide. An efficiency of 4% per facet at electron beam energies of 18-21 keV was achieved. The output pulse power up to 12 W was detected.Electron-beam-pumped (EBP) green semiconductor lasers based on ZnSe can be successfully used for numerous applications, such as projection television, optical communications via plastic fibers, medicine etc. The method of electron-beam excitation [1] has some specific features. First, the EBP lasers do not need in a p-n junction and contacts. Therefore, they are out of doping problems, especially the p-type ones inherent for all wide gap materials, like ZnSe. Since the electrical and optical instability of N-acceptors has been shown to be responsible for the slow degradation of ZnSe green laser diodes [2,3], one can expect the strongly enhanced degradation stability of undoped ZnSe-based EBP lasers. In addition, they have no problems of carrier transport from n-and p-type cladding layers to a laser active region. Due to the bulk nature of the electron-beam excitation the thickness of an active region of EBP lasers can be significantly larger than that of injection pumped lasers, the latter being limited by a thickness of the space charge region at a pn junction. Using of thick active region allows one to obtain the higher level of output power in EBP lasers in comparison with injection lasers. By increasing the electron beam cross-section, one can pump the laser arrays consisted of a number of single lasers, which enables one either to increase further the output power or demonstrate lasing at multiple wavelengths simultaneously.However, the application of such lasers is strongly restricted by both a relatively high threshold current density at room-temperature (RT) and a high energy of the electron beam needed for laser generation. Sufficient progress in the development of EBP lasers has been achieved using semiconductor heterostructures as the laser active elements instead of bulk materials. The lasing with microgun excitation both in infrared at RT and in blue-green spectral region at cryogenic temperatures have been demonstrated [4,5]. Fabrication of EBP blue-green RT lasers based on alternately-strained superlattice waveguide with the value of threshold current density as low as 0.8 A/cm2 and pulse output power as high as 9 W has been recently reported [6,7]. The value of external quantum efficiency of 1.6% per facet has been registered [6]. This paper report on modification of the active region of Cd(Zn)Se-based green RT EBP lasers, resulting in the efficiency as high as 4% per one facet at the electron beam energy of 18-21 keV.

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“…In recent time, a stable tendency to decreasing the pump elec tron beam energy is observed. The use of the miniature field electron source in [6] made it possible to fabricate compact lasers operating at beam energies of 7-10 keV in the near IR range at 90-300 K.…”

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Field injection of low-energy electrons into the ZnSe/CdSe/ZnSe heterostructure with the use of an ultra-high-vacuum tunneling microscope

et al. 2012

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In lasers with electron beam pumping, the semi conductor crystal transforms the energy of the acceler ated electron beam into the laser emission with a wavelength corresponding to the band gap of the used semiconductor. Pumping with the fast electron beam is a universal method of lasing in semiconductor mate rials with any band gap E g and any starting resistivity. Such lasers make it possible to generate optical pulses with a power of several tens of megawatts in a broad spectral range from the mid IR to near UV range.The main advantage of the lasers with electron beam pumping is in the absence of necessity of doping the used semiconductor materials. Elimination of requirements to p doping is especially essential for wide band gap semiconductor structures formed based on Group II-VI and III-V elements. Electron energy in electron beam pumping is relatively high, namely, 5-100 keV [1,2]. The necessity of using such energies is associated with low efficiency of penetra tion of the electron beam into the solid. Upon varying the energy of electrons from 10 to 200 keV, their effec tive penetration depth varies from 1 to 60 μm [3]. The active region of the laser with transverse electron beam pumping is usually arranged at a distance of several micrometers from the surface. It was shown as a result of numerous experimental investigations of impact ionization [4, 5] that average energy 〈E〉 necessary for the formation of one pair of carriers under the effect of the primary electron is determined only by the band gap of semiconductor 〈E〉 ≈ 3E g . Therefore, electrons with an energy of several tens and hundreds of kilo electronvolts possess the deliberately excessive energy.The use of high energy electrons causes the problems associated with carrier thermalization to equilibrium temperatures. This leads to nonuniform heating of the crystal lattice, appearance of local mechanical stresses, and overheating of the quasi equilibrium electron-hole plasma (which appears during pair Coulomb collisions) in the active region of the laser [3]. A decrease in the excessive energy of the electron beam eliminates the problems associated with the sub sequent thermalization and, as a consequence, leads to a decrease in the threshold current density. In recent time, a stable tendency to decreasing the pump elec tron beam energy is observed. The use of the miniature field electron source in [6] made it possible to fabricate compact lasers operating at beam energies of 7-10 keV in the near IR range at 90-300 K.In this work, we evaluated the efficiency of the use of the low voltage field electron emission for electron beam pumping. As the electron source, the metal probe of an LS SPM ultra high vacuum probe micro scope (OMICRON) is used. The probe of the ultra high vacuum scanning tunneling microscope (STM) is moved closer to the heterostructure under study to a distance of several nanometers. With the negative bias voltage of several volts supplied to the metal probe, field electron emission from the metal surface appears under the effect of...

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Microgun-pumped semiconductor laser

Cited by 42 publications

References 5 publications

Cathodoluminescence study of carrier diffusion in AlGaN

Cathodoluminescence study of carrier diffusion in AlGaN

High‐efficiency electron‐beam pumped green semiconductor lasers based on multiple CdSe quantum disk sheets

Field injection of low-energy electrons into the ZnSe/CdSe/ZnSe heterostructure with the use of an ultra-high-vacuum tunneling microscope

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