Cathodoluminescence study of carrier diffusion in AlGaN

Barjon, Julien; Brault, J.; Daudin, B.; Jalabert, D.; Sieber, Brigitte

doi:10.1063/1.1593797

Cited by 26 publications

(16 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For comparison, the carrier diffusion length observed in GaN NWs or high quality bulk GaN is in the range of ~1-3 m [ 45 , 46 ]. Other reports give shorter diffusion lengths in the range of 10 to 100 nm, due to the presence of defects [ 47,48,49 ]. The signal extension observed in the present study is much smaller than all reported values.…”

Section: Resultsmentioning

confidence: 99%

Visualizing highly localized luminescence in GaN/AlN heterostructures in nanowires

Zagonel¹,

Rigutti²,

Tchernycheva³

et al. 2012

Nanotechnology

View full text Add to dashboard Cite

The optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN nanowire have been studied by spatially resolved cathodoluminescence (CL) at the nanoscale (nanoCL) using a scanning transmission electron microscope (STEM) operating in spectrum imaging mode. For the electron beam excitation in the QDisc region, the luminescence signal is highly localized, with spatial extent as low as 5 nm, due to the high band gap difference between GaN and AlN. This allows the discrimination between the emission of neighbouring QDiscs and evidencing the presence of lateral inclusions, about 3 nm thick and 20 nm long rods (quantum rods, QRods), grown unintentionally on the nanowire sidewalls. These structures, also observed by STEM dark-field imaging, are proved to be optically active in nanoCL, emitting at similar, but usually shorter, wavelengths with respect to most QDiscs.

show abstract

Section: Resultsmentioning

confidence: 99%

Visualizing highly localized luminescence in GaN/AlN heterostructures in nanowires

Zagonel¹,

Rigutti²,

Tchernycheva³

et al. 2012

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…[4]. 3 Results and discussion CL allows optical probing in various depths by changing the carrier generation volume, which is proportional to the acceleration voltage [9]. Both spectra show sharp emission lines of the red 5 D 0 -7 F 2 transitions, with well resolved Stark splittings.…”

Section: Methodsmentioning

confidence: 97%

Eu³⁺ location in Eu doped GaN thin films and quantum dots

Andreev

Liem

Hori

et al. 2006

Phys. Status Solidi (c)

View full text Add to dashboard Cite

We report on a comparative optical study of molecular beam epitaxy grown GaN:Eu quantum dots (QDs) and GaN:Eu layer. In the GaN:Eu layer the narrow emission lines of the 5D0-7F2 transition allow to identify two different Eu locations corresponding to near the sample surface and lying deeper in the bulk. Eu 3+ emission from QDs has been found to be at the same spectral position than that assigned to Eu 3+ ions located in the bulk of the GaN:Eu layer. Eu emission in the temperature range 4-300 K is thermally stable in doped QDs, but exhibits a strong thermal quenching in the doped layer, particularly for Eu 3+ ions located near the surface.

show abstract

“…was simulated with a previous version of the MC software CASINO~Hovington et al, 1997a!. Similar CL modeling applications were obtained with different MC software~Holt & Napchan, 1994; Barjon et al, 2003!. However, the simulation of CL emission in a sample with nonradiative recombination area, such as dislocation, was not possible with these MC software.…”

Section: Introductionmentioning

confidence: 89%

Three-Dimensional Electron Energy Deposition Modeling of Cathodoluminescence Emission near Threading Dislocations in GaN and Electron-Beam Lithography Exposure Parameters for a PMMA Resist

et al. 2012

View full text Add to dashboard Cite

The Monte Carlo software CASINO has been expanded with new modules for the simulation of complex beam scanning patterns, for the simulation of cathodoluminescence (CL), and for the calculation of electron energy deposition in subregions of a three-dimensional (3D) volume. Two examples are presented of the application of these new capabilities of CASINO. First, the CL emission near threading dislocations in gallium nitride (GaN) was modeled. The CL emission simulation of threading dislocations in GaN demonstrated that a better signal-to-noise ratio was obtained with lower incident electron energy than with higher energy. Second, the capability to simulate the distribution of the deposited energy in 3D was used to determine exposure parameters for polymethylmethacrylate resist using electron-beam lithography (EBL). The energy deposition dose in the resist was compared for two different multibeam EBL schemes by changing the incident electron energy.

show abstract

Cathodoluminescence study of carrier diffusion in AlGaN

Cited by 26 publications

References 16 publications

Visualizing highly localized luminescence in GaN/AlN heterostructures in nanowires

Visualizing highly localized luminescence in GaN/AlN heterostructures in nanowires

Eu³⁺ location in Eu doped GaN thin films and quantum dots

Three-Dimensional Electron Energy Deposition Modeling of Cathodoluminescence Emission near Threading Dislocations in GaN and Electron-Beam Lithography Exposure Parameters for a PMMA Resist

Contact Info

Product

Resources

About

Cathodoluminescence study of carrier diffusion in AlGaN

Cited by 26 publications

References 16 publications

Visualizing highly localized luminescence in GaN/AlN heterostructures in nanowires

Visualizing highly localized luminescence in GaN/AlN heterostructures in nanowires

Eu3+ location in Eu doped GaN thin films and quantum dots

Three-Dimensional Electron Energy Deposition Modeling of Cathodoluminescence Emission near Threading Dislocations in GaN and Electron-Beam Lithography Exposure Parameters for a PMMA Resist

Contact Info

Product

Resources

About

Eu³⁺ location in Eu doped GaN thin films and quantum dots