Microfabricated inductors for 20 MHz Dc-Dc converters

O’Donnell, Terence; Wang, N.; Meere, Ronan; Rhen, Fernando M.F.; Roy, Saibal; O’Sullivan, Don; O’Mathuna, Cian

doi:10.1109/apec.2008.4522796

Cited by 51 publications

(20 citation statements)

References 14 publications

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“…Also, the output current of the converter at 5 A is quite high and would require a smaller inductance than most low-power switching converters. The work by O'Donnell et al [5] demonstrates a relatively small (6.4 mm 2 ) microinductor in operation in a 20-MHz converter. The maximum efficiency of the microinductor in the converter in this case was estimated to be approximately 93%.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Microinductor Performance in a 20-100 MHz DC/DC Converter

Meere

O’Donnell

Bergveld

et al. 2009

IEEE Trans. Power Electron.

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Abstract-This paper presents a low-profile thin-film microfabricated inductor on silicon and its performance in a high-frequency low-power dc/dc converter. The design of the inductors has focused on maximizing efficiency while maintaining a relatively flat frequency response up to 30 MHz. The inductance at 20 MHz is approximately 150 nH with a resistance of 1.8 Ω. The performance of the microinductor has been compared to two conventional commercially available 150-nH chip inductors. One of the chip inductors has a magnetic-material core and the other is an air core. The maximum efficiency of the microinductor, which relates the power loss of the microinductor to output power loss of the converter, is measured to be approximately 93% at 20 MHz. The low-power dc/dc converter operates in the tens of milliwatts output power range, with an input voltage of 1.8 V and an output voltage programmable between 0 and 1.8 V. The converter maximum efficiency when using the microinductor on silicon is 78.5% at 20 MHz, which is approximately 2% lower than the efficiency using the conventional chip inductors.Index Terms-DC/DC conversion, high frequency, low profile, magnetic-core inductors.

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Section: Introductionmentioning

confidence: 99%

Analysis of Microinductor Performance in a 20-100 MHz DC/DC Converter

Meere

O’Donnell

Bergveld

et al. 2009

IEEE Trans. Power Electron.

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“…A typical example is micro-inductor built on silicon for a 20 MHz DC-DC converter in Fig. 22 [108]. The coil is typically formed by depositing conductor on silicon wafers with a maximum thickness of 50 μm.…”

Section: Power Supply On Chip and Power Supply In Packagementioning

confidence: 99%

Review of State-of-the-Art Integration Technologies in Power Electronic Systems

Wang¹

2017

CPSS TPEA

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“…Furthermore, the volume in the devices available for power electronics is normally very limited which necessitates the use of integration technologies to achieve small volumes and high power densities of power electronics. Integrating passive components in silicon makes monolithic integration of power converters in system-on-chip difficult [1] and hybrid integration in the form of system-in-package (SiP) where passive components are implemented in alternative technologies [2], [3] and integrated in the package seems to be a more feasible option at this point in time.…”

Section: Introductionmentioning

confidence: 99%

Topology comparison and design optimisation of the buck converter and the single-inductor dual-output converter for system-in-package in 65nm CMOS

Haizoune

Bergveld

Popović

et al. 2009

2009 IEEE 6th International Power Electronics and Motion Control Conference

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Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: Abstract-Portable electronic devices, such as laptop computers and personal portable electronic devices are battery-powered and need power-electronics converters as an interface between the battery and the load. To ensure a long battery life, it is important that the power-electronic converters operate at high efficiency. The volume available for power electronics is limited which necessitates the use of integration technologies to achieve high-power-density converters. Integrating passive components in silicon makes monolithic integration of power converters in system-on-chip difficult and hybrid integration in the form of system-in-package where passive components are implemented in alternative technologies and integrated in the package seems to be a more feasible option at present.High operating frequencies, necessary for the reduction of the passive components size results in the increase of switching losses in the power semiconductors which negatively influences the efficiency. Furthermore, power semiconductor losses are directly dependent on the chip size which in turn influences the cost of the converter. Also, the losses are dependent on the time waveforms of electrical currents and voltages which in turn depend on the chosen circuit topology. The paper presents a topology comparison and a design optimization procedure for the implementation of a DC-DC converter (V in 3V-4.2V from Li-ion battery, V out 0.6V-1.2V, load current< several 100mA). It is assumed that the active part of the converter is implemented in 65nm CMOS technology. A high-level topology evaluation based on several crite...

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Microfabricated inductors for 20 MHz Dc-Dc converters

Cited by 51 publications

References 14 publications

Analysis of Microinductor Performance in a 20-100 MHz DC/DC Converter

Analysis of Microinductor Performance in a 20-100 MHz DC/DC Converter

Review of State-of-the-Art Integration Technologies in Power Electronic Systems

Topology comparison and design optimisation of the buck converter and the single-inductor dual-output converter for system-in-package in 65nm CMOS

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