Microengineered CH3NH3PbI3 Nanowire/Graphene Phototransistor for Low‐Intensity Light Detection at Room Temperature

Spina, Massimo; Lehmann, Mario; Náfrádi, Bálint; Bernard, Laurent; Bonvin, E.; Gáal, R.; Magrez, Arnaud; Forró, Lászlø; Horváth, Endre

doi:10.1002/smll.201501257

Cited by 154 publications

(182 citation statements)

References 24 publications

(35 reference statements)

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“…Figure 6D shows the response time and recovery time of our device, which were found to be around 0.71 and 0.60 s, respectively. Both of them are shorter than 1 s, which are significantly faster compared with the previously reported perovskite detectors [37][38][39]. And, the faster response speed of this CsPb 2 Br 5 thin microsheets based photodetector could be ascribed to the high crystal quality of asprepared CsPb 2 Br 5 microsheets, which guaranteeing the efficient optical absorption and photogeneration of carriers.…”

Section: Resultsmentioning

confidence: 75%

All-Inorganic Perovskite CsPb2Br5 Microsheets for Photodetector Application

Tang

Han

et al. 2018

Front. Phys.

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Lead-halide perovskites have emerged as one kind of important optoelectronic materials with excellent performance in photovoltaic and light-emitting diode applications. Herein, we reported all-inorganic perovskite CsPb 2 Br 5 microsheets prepared by a facile injection method. Through the X-ray diffraction (XRD) and Scanning Electron Microscope (SEM), it could be seen that the CsPb 2 Br 5 microsheets showed single tetragonal crystalline phase and kept uniform square shape. Moreover, the as-synthesized CsPb 2 Br 5 microsheets exhibited photoluminescence emission at 513 nm, and the UV-vis absorption spectrum further indicated the band gap of CsPb 2 Br 5 microsheets was ≈2.50 eV. Additionally, the as-fabricated CsPb 2 Br 5 microsheets based photodetector exhibited faster photoresponse characteristics of short rise time (0.71 s) and decay time (0.60 s), which demonstrated its promising application as high performance electronic and optoelectronic devices.

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Section: Resultsmentioning

confidence: 75%

All-Inorganic Perovskite CsPb2Br5 Microsheets for Photodetector Application

Tang

Han

et al. 2018

Front. Phys.

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“…Since R is closely related to the incident light intensity (Equation (4) and Figure 2g), superhigh R values can thus be obtained when irradiated by extremely low light powers 56, 69, 70, 71, 72, 75, 85, 86, 87, 88, 89, 90. Other differences in testing conditions such as the bias voltages and the incident wavelengths will also affect the electrical performance of the devices.…”

Section: Factors Influencing Photodetectors Performancesmentioning

confidence: 99%

Photodetectors Based on Organic–Inorganic Hybrid Lead Halide Perovskites

2017

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Recent years have witnessed skyrocketing research achievements in organic–inorganic hybrid lead halide perovskites (OIHPs) in the photovoltaic field. In addition to photovoltaics, more and more studies have focused on OIHPs‐based photodetectors in the past two years, due to the remarkable optoelectronic properties of OIHPs. This article summarizes the latest progress in this research field. To begin with, the factors influencing the performance of photodetectors are discussed, including both internal and external factors. In particular, the channel width and the incident power intensities should be taken into account to precisely and objectively evaluate and compare the output performance of different photodetectors. Next, photodetectors fabricated on single‐component perovskites in terms of different micromorphologies are discussed, namely, 3D thin‐film and single crystalline, 2D nanoplates, 1D nanowires, and 0D nanocrystals, respectively. Then, bilayer structured perovskite‐based photodetectors incorporating inorganic and organic semiconductors are discussed to improve the optoelectronic performance of their pristine counterparts. Additionally, flexible OIHPs‐based photodetectors are highlighted. Finally, a brief conclusion and outlook is given on the progress and challenges in the field of perovskites‐based photodetectors.

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“…[18][19][20][21][22][23][24] However, the reported bilayer devices usually employed high-conductive 2D layer to function as main photocarrier transport channel, and this leads to certain detrimental defects. For example, the graphene/perovskite bilayer devices exhibit very low on/off ratio of smaller than 2, [18][19][20][21] and the transition metal sulfides (WS 2 , MoS 2 )/perovskite bilayer devices have very long rise/decay time of a few seconds. [22,23] Also, it should be noted that graphene and the transition metal sulfides are usually deposited by complex and costly process, such as chemical vapor deposition, mechanical exfoliation, and hence is not suitable for large-area fabrication.…”

Section: Doi: 101002/aelm201700251mentioning

confidence: 99%

“…[11,12] Owing to their exciting photovoltaic applications, their promising potential in photodetection is drawing growing interest. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] Yang and co-workers first fabricated a vertical perovskite photodetector, [13] which demonstrated excellent light detecting capability. Lateral photodetectors are easy to make, and more importantly, their intrinsic gain mechanism can lead to very high photosensitivity.…”

mentioning

confidence: 99%

TiO₂ Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors

Ren

Chen

et al. 2017

Adv Elect Materials

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long carrier diffusion lengths, [9,10] and low deep-state defects. [11,12] Owing to their exciting photovoltaic applications, their promising potential in photodetection is drawing growing interest. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] Yang and co-workers first fabricated a vertical perovskite photodetector, [13] which demonstrated excellent light detecting capability. Lateral photodetectors are easy to make, and more importantly, their intrinsic gain mechanism can lead to very high photosensitivity. [30] Thereby many efforts have been devoted to developing such lateral devices. For single-layer perovskite devices reported, [14][15][16][17] relatively high detectivity (≈10 12 Jones) and short rise/decay time (dozens of milliseconds) were realized, but this is always associated with low on/ off ratios and poor electrical instabilities (induced by ion migration). To meet such challenge, bilayer devices are designed: perovskite film responsible for light absorption and another material film responsible for carriers transport. Significant enhancement in photoresponsivity has been achieved. [18][19][20][21][22][23][24] However, the reported bilayer devices usually employed high-conductive 2D layer to function as main photocarrier transport channel, and this leads to certain detrimental defects. For example, the graphene/perovskite bilayer devices exhibit very low on/off ratio of smaller than 2, [18][19][20][21] and the transition metal sulfides (WS 2 , MoS 2 )/perovskite bilayer devices have very long rise/decay time of a few seconds. [22,23] Also, it should be noted that graphene and the transition metal sulfides are usually deposited by complex and costly process, such as chemical vapor deposition, mechanical exfoliation, and hence is not suitable for large-area fabrication. Solutionprocessed MoS 2 [24] or organic [25,26] /CH 3 CH 3 PbI 3 photodetectors have been fabricated, but their performances are still limited by low on/off ratios of <500. Here we employed TiO 2 nanocrystal (NC) film to transport photocarrier. The designed TiO 2 NC/perovskite bilayer photodetector exhibits high overall performance with on/off ratio of 4000, photodetectivity of 1.85 × 10 12 Jones, and rise/decay time of 0.49/0.56 s. Figure 1a presents the schematic structure of the TiO 2 NC/ perovskite bilayer photodetector fabricated on a glass substrate. First, the TiO 2 NC film was spin coated on the glass substrate, and then Al electrodes were thermally evaporated on the TiO 2 NC film with help of an interdigital mask, resulting in a channel length of 80 µm and a channel width of 8800 µm. The perovskite film (CH 3 NH 3 PbI 3 ) was then spin coated on the TiO 2 NC film, completing the device fabrication (details Owing to their attractive performance in photovoltaic devices, organolead halide perovskite materials have attracted enormous interest for photodetector applications. However, current perovskite-based photodetectors mainly rely on high-conductive 2D materials such as graphene or transition metal sulfi...

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Microengineered CH₃NH₃PbI₃ Nanowire/Graphene Phototransistor for Low‐Intensity Light Detection at Room Temperature

Cited by 154 publications

References 24 publications

All-Inorganic Perovskite CsPb2Br5 Microsheets for Photodetector Application

All-Inorganic Perovskite CsPb2Br5 Microsheets for Photodetector Application

Photodetectors Based on Organic–Inorganic Hybrid Lead Halide Perovskites

TiO₂ Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors

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Microengineered CH3NH3PbI3 Nanowire/Graphene Phototransistor for Low‐Intensity Light Detection at Room Temperature

Cited by 154 publications

References 24 publications

All-Inorganic Perovskite CsPb2Br5 Microsheets for Photodetector Application

All-Inorganic Perovskite CsPb2Br5 Microsheets for Photodetector Application

Photodetectors Based on Organic–Inorganic Hybrid Lead Halide Perovskites

TiO2 Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors

Contact Info

Product

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Microengineered CH₃NH₃PbI₃ Nanowire/Graphene Phototransistor for Low‐Intensity Light Detection at Room Temperature

TiO₂ Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors