Microelectronic properties of organic Schottky diodes based on MgPc for solar cell applications

Missoum, I.; Ocak, Yusuf Selim; Benhaliliba, M.; Benouis, C.E.; Chaker, Abla

doi:10.1016/j.synthmet.2016.01.004

Cited by 51 publications

(23 citation statements)

References 35 publications

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“…For instance, the improved performance of complementary CMOS transistors requires the high k-metal oxides such as HfO 2 the substitution of the SiO 2 gate oxide. [4][5][6][7] Therefore, the high k-metal oxides such as HfO 2 can be selected for the GaAs MOSFETs, MOS high-electron-mobility transistors (MOS-HEMTs) and high voltage power switching devices.…”

Section: -10mentioning

confidence: 99%

“…MS rectifying current and admittance theory serve in understanding the foundation of the semiconductor device physics. [1][2][3][4][5][6] The metal-insulator-semiconductor (MIS) or MOS capacitors are the most useful devices in semiconductor surface physics studies since most practical problems in the reliability and stability of all semiconductor devices are closely related to their surface DOI: 10.32571/ijct.456902 E-ISSN:2602-277X…”

Section: Introductionmentioning

confidence: 99%

“…conditions. [1][2][3][4][5][6][7][8][9][10] We have prepared the Au/Ti/HfO 2 /n-GaAs MIS structures. The metal oxide interfacial layer with 3, 5 and 10 nm thickness, the hafnium dioxide (HfO 2 ) thin film, was grown by the ALD technique.…”

Section: Introductionmentioning

confidence: 99%

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Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer

Karabulut

Orak

Türüt

2018

International Journal of Chemistry and Technology

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We have fabricated, metal-insulator-semiconductor (MIS) structures, the Au/Ti/HfO2/n-GaAs. Metal rectifying contacts were made by DC magnetron sputtering technique, and hafnium dioxide (HfO2) interfacial insulating layer with 3, 5 and 10 nm thickness has been formed by the atomic layer depositon (ALD) technique. The series resistance values from the forward bias current-voltage (I-V) curves of 3 nm and 5 nm MIS structures has reduced very slightly with a decrease in the measurement temperature. The diode potential barrier height value from I-V characteristics increased with increasing HfO 2 layer thickness. Thus, the diode potential barrier height.was changed using the interfacial layer of the hafnium dioxide. Barrier height increment is an important and desirable feature in the field effect transistors (FET) and microwave mixers.

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Section: -10mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer

Karabulut

Orak

Türüt

2018

International Journal of Chemistry and Technology

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“…The I-V characteristics of the Al/n-ZnO/p-Si/Al device are described by thermionic emission model as follows [72,73]:…”

Section: I-v Characteristics Of Al/n-zno/p-si/al Devicementioning

confidence: 99%

“…where A * is Richardson constant (32 A/K 2 ·cm 2 for p-type Si) [72], A is effective device area T is the ambient temperature in Kelvin, q is electron charge, Φ b is zero-bias barrier height of our device expressed as follows [73]:…”

Section: I-v Characteristics Of Al/n-zno/p-si/al Devicementioning

confidence: 99%

Nanostructured device based on coated ZnO layer as a window in solar cell applications

Mokhtari

Benhaliliba

Boukhachem

et al. 2018

Materials Science-Poland

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This work highlights some physical properties related to the influence of aluminum, tin and copper incorporation on nanostructured zinc oxide (ZnO:M; M:Al, Sn and Cu) thin films prepared by ultrasonic spray pyrolysis technique (USP) on glass substrate at 350±5°C. For the as-grown layers, M-to Zn-ratio was fixed at 1.5 %. The effects of metal doping on structural, morphological, optical and electrical properties were investigated. X-ray diffraction pattern revealed that the as-prepared thin films crystallized in hexagonal structure with (0 0 2) preferred orientation. The surface topography of the films was performed by atomic force microscopy. AFM images revealed inhibition of grain growth due to the doping elements incorporation into ZnO matrix, which induced the formation of ZnO nanoparticles. Optical measurements showed a high transparency around 90 % in visible range. Some optical parameters, such as optical band gap, Urbach energy, refractive index, extinction coefficient and dielectric constant were studied in terms of doping element. Particularly, dispersion of refractive index was discussed in terms of both Cauchy and single oscillator model proposed by Wemple and DiDomenico. Cauchy parameters and single oscillator energy E 0 as well as dispersion energy E d were calculated. Finally, electrical properties were investigated by means of electrical conductivity and Hall effect measurements. The measurements confirmed n type conductivity of the prepared thin films and a good agreement between the resistivity values and the oxidation number of doping element. The main aim of this work was the selection of the best candidate for doping ZnO for optoelectronics applications. The comparative study of M doped ZnO (M:Al, Sn and Cu) was performed. High rectifying efficiency of the Al/n-ZnO/p-Si/Al device was achieved and non-ideal behavior was revealed with n > 4.

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Porphyrin and Phthalocyanine as Materials for Glass Coating—Structure and Properties

Popanda

Środa²

2023

Advances in Material Research and Technology

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Microelectronic properties of organic Schottky diodes based on MgPc for solar cell applications

Cited by 51 publications

References 35 publications

Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer

Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer

Nanostructured device based on coated ZnO layer as a window in solar cell applications

Porphyrin and Phthalocyanine as Materials for Glass Coating—Structure and Properties

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