Microelectronic Processing Laboratory at NBS

The relationship between resistivity and dopant density for phosphorus-and boron-doped silicon

“…Analytical curves were fitted to the resistivity-dopant density product as a function of resistivity and dopant density for temperatures of 23°C and 300 K. Similar curves were obtained for the calculated carrier mobility as a function of resistivity and carrier density. 12. KEY WORDS (Six to twelve entries; alphabeti cal order; capitalize only proper names; and separate key words by semicolons) Boron; capacitance-voltage technique; dopant density; electron mobility; Hall effect; hole mobility; Irvin curves; phosphorus; resistivity; semiconductor; silicon.…”

“…The data used for the curve fitting consisted of 26 points obtained from the C-V measurements, 12 points determined from the Hall effect measurements, 2 points from Esaki and Miyahara [43], and 1 point from Fair and Tsai [35]. The latter three points are listed in table 8 and were included to increase * A value of 1.602 x 10"^^C was used for q in all of the curve fits; consequently, this is the appropriate value to use for subsequent calculations.…”

“…(4) min (In this equation (qPN)j^in' ^^P^^max' ^ref' ^^'^^represent the parameters to be determined; they are "not constants from previous fits.) Values for the four parameters are listed in table 12 for both 23°C and 300 K. The curve for 300 K and the experimental data used to obtain it are shown in figure 14. In comparing the product fits as a function of resistivity with those as a function of dopant density, it is evident that minimum and maximum values which should be correspondingly equal are somewhat different. This is, of course, a consequence of the independent fits where no parameters are fixed.…”

Resistivity‐Dopant Density Relationship for Boron‐Doped Silicon

“…These test structures and other diagnostic structures were assembled on microelectronic test patterns NBS-3 (6) and NBS-4 (7). The starting material, in both ingot and slice form, was obtained from several different suppliers and was selected for minimum resistivity gradients by mechanical four-probe measurements prior to fabrication of the test patterns by bipolar processing (8). Spreading resistance measurements were made on a number of the wafers and no fine structure was seen.…”