The relationship between resistivity and dopant density for phosphorus-and boron-doped silicon

Measurement and Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level

“…The empirical model derived here from the photoconductance measurements is in good agreement with the existing injection dependence mobility models, especially in the range of injection levels relevant for the characterization of silicon wafers by photoconductance measurements, that is, from approximately 1 × 10 15 to 3 × 10 16 cm −3 . In this range, (6) gives intermediate values to the other models. For injection levels below 1 × 10 15 cm −3 , (6) coincides with WCT-100 parameterization, but is about 10% lower than the Klaassen and Dorkel-Leturcq models.…”

Effects of the amount of Si rings on the phase separation and crystallization of silicon-rich SiO2 thin films

“…Fig. 5 shows the crystalline fraction of the Si-NC thin films subjected to the SRTA at 1000 • C for 120 s after FRTA at RT -800 • C. The crystalline fractions of thin films were analyzed by Raman spectra according to the existing methods [20]. As shown in Fig.…”

“…The Si clusters and their crystallization in the oxide matrix was carried out using confocal micro-Raman spectroscope (Renishaw, InVia-Reflex) with Ar laser (532 nm). The laser power was below 3.5 mW to avoid local crystallization [18,20]. The samples had been measured three times for the error bars.…”

Investigation of optimized experimental parameters including laser wavelength for boron measurement in photovoltaic grade silicon using laser-induced breakdown spectroscopy

“…All of the samples were mono-crystalline silicon which were produced by the Czochralski process (Siltronix SAS) and boron-doped in the range 1 to 100 pmmw (resistivity between 0.009 and 0.238 Ω cm). It should be mentioned that the samples were certified by resistivity and not by the boron concentration, which was calculated from tables found in the literature and assuming the samples contained only boron [33][34][35]. In order to maintain the same conditions for all measurements, the sample was moved after each shot, so as to analyze a clean spot.…”