Microelectromechanical capacitors for RF applications

Abstract

This paper describes the design principles of electrostatically actuated microelectromechanical capacitors. Key properties, such as capacitance tuning range, quality factor (Q), different control methods, thermal stability, effect of radio frequency signal on capacitance and gas damping are examined. Experimental devices were designed and fabricated using the design principles. The two-gap capacitor has a measured nominal capacitance of 1.58 pF and achieves a tuning range of 2.25:1 with parasitics. When all parasitic capacitances to the substrate are extracted the measured nominal capacitance is 1.15 pF and the tuning range is 2.71:1. The device is made of electroplated gold and has a Q of 66 at 1 GHz, and 53 at 2 GHz. In addition, two- and three-state capacitors were designed, fabricated and characterized.

An account of spin memristive and memcapacitive systems: Next generation memory devices

“…The loop narrows down as the frequency increases in conformity with the theoretical predictions in [37]. (42). In the inset we show the same quantity for f =2 GHz and V 0 =20 V compared with the capacitance obtained directly from simulations.…”

“…Various systems are known to exhibit memcapacitive behavior including vanadium dioxide metamaterials, [33 ] nanoscale capacitors with interface traps or embedded nanocrystals, [38][39][40][41] and elastic capacitors [42,43]. Here we review metamaterial memcapacitor, nanopore memcapacitor and elastic membrane memcapacitor system.…”

Solid-state memcapacitive system with negative and diverging capacitance

“…14,15 As anticipated in Ref. 8, memcapacitive effects may also accompany memristive effects in nanostructures, since in many of them the morphology of conducting regions changes in time.…”

Experimental characterization of electrostatically actuated in-plane bending of microcantilevers

“…Cantilever beams are widely used as basic components in microsensors, microswitches and RF-MEMS, as well as in experimental micromechanics, for evaluating mechanical properties and strength of materials (Adamsy et al 1998;Bosseboeuf et al 2003;Bhushan et al 2004;Casinovi et al 2004;Fang et al 1999;Frlcke et al 1993;Greek et al 1999;Holbery et al 2000;Koch et al 1997;Lucas et al 1997;McCord et al 1998;Merijn et al 2003;Najafi et al 1991;Nieminen et al 2002;Rebeiz et al 2003;Tonnesen et al 1997;Vietzorreck et al 2005;Walker et al 2000;Yao et al 2000). These applications justify the use of effective numerical models to predict the electromechanical performance of microstructures when exposed to an electric field, as stand-alone systems or as structural components of assembled microdevices (Frlcke et al 1993;Gaddi et al 2004;Harness et al 2000;Hoffmann et al 2001;Jaecklint et al 1992;Koch et al 1997;Paci et al 2004;Sattler et al 2001;Rebeiz et al 2003).…”