Solid-state memcapacitive system with negative and diverging capacitance

Martínez-Rincón, Julián; Ventra, Massimiliano Di; Pershin, Yuriy V.

doi:10.1103/physrevb.81.195430

Cited by 80 publications

(88 citation statements)

References 30 publications

(31 reference statements)

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“…Similar considerations hold also for memcapacitive and meminductive systems. For example, we reported O-shaped hysteresis curves in solid-state memcapacitive systems [26].…”

Section: Some General Properties Of Response Functionsmentioning

confidence: 99%

On the physical properties of memristive, memcapacitive and meminductive systems

2013

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Abstract. We discuss the physical properties of realistic memristive, memcapacitive and meminductive systems. In particular, by employing the well-known theory of response functions and microscopic derivations, we show that resistors, capacitors and inductors with memory emerge naturally in the response of systems -especially those of nanoscale dimensions -subjected to external perturbations. As a consequence, since memristances, memcapacitances, and meminductances are simply response functions, they are not necessarily finite. This means that, unlike what has always been argued in some literature, diverging and non-crossing input-output curves of all these memory elements are physically possible in both quantum and classical regimes. For similar reasons, it is not surprising to find memcapacitances and meminductances that acquire negative values at certain times during dynamics, while the passivity criterion of memristive systems imposes always a non-negative value on the resistance at any given time. We finally show that ideal memristors, namely those whose state depends only on the charge that flows through them (or on the history of the voltage) are subject to very strict physical conditions and are unable to protect their memory state against the unavoidable fluctuations, and therefore are susceptible to a stochastic catastrophe. Similar considerations apply to ideal memcapacitors and meminductors.arXiv:1302.7063v2 [cond-mat.mes-hall]

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“…Similar considerations hold also for memcapacitive and meminductive systems. For example, we reported O-shaped hysteresis curves in solid-state memcapacitive systems [26].…”

Section: Some General Properties Of Response Functionsmentioning

confidence: 99%

On the physical properties of memristive, memcapacitive and meminductive systems

2013

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“…In this paper, however, we focus solely on the memory in the line's capacitance, C(X, V, y, t), that can be easily implemented experimentally. In fact, there are several possible realizations of memcapacitive systems described in the literature [8][9][10][11][12][13][14]. However, we do not refer to anyone specific system here, so as to keep the discussion general.…”

Section: Pacs Numbersmentioning

confidence: 99%

Reconfigurable transmission lines with memcapacitive materials

Pershin

Slipko

Ventra

2015

Applied Physics Letters

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We study transmission lines made of memory capacitive (memcapacitive) materials. The transmission properties of these lines can be adjusted on demand using an appropriate sequence of pulses.In particular, we demonstrate a pulse combination that creates a periodic modulation of dielectric properties along the line. Such a structure resembles a distributed Bragg reflector having important optical applications. We present simulation results demonstrating all major steps of such a reconfigurable device operation including reset, programming and transmission of small amplitude signals. The proposed reconfigurable transmission lines employ only passive memory materials and can be realized using available memcapacitive devices. PACS numbers:Transmission lines are useful and ubiquitous structures developed for a wide range of applications ranging from the transmission of radio frequency and microwave signals [1] to coupling of superconducting qubits [2,3], to name a few. In particular, coaxial cables are transmission lines for radio frequency signals. Their design consists in a shielded central core separated from a shield by a dielectric material [4]. More complex transmission line designs can be realized with metamaterials [1,5].In general, transmission lines are built to support specific transmission characteristics (such as the frequency range, etc.) that are fixed once and for all by their design. In other words, in order to change, e.g., their frequency range one needs to change the materials (or structure) of the line itself. It would be very beneficial if instead we could reconfigure the transmission properties on demand by a simple application of appropriate input signals. This way, a single transmission line could perform different tasks functioning, for example, as a delay line, band-stop filter, etc.In this paper, we propose precisely this concept by introducing reconfigurable transmission lines based on memcapacitive materials [6,7]. Such lines could be realized in practice by, e. g., partially (or entirely) replacing the usual dielectric insulator in a coaxial cable (or other transmission line realization) with a memcapacitive material, namely, a material whose relative permittivity depends on the history of signals applied (see Fig. 1(a) for a conceptual image) [7]. Using an appropriate combination of pulses, one can pre-program the properties of memcapacitive materials on demand, and thus select the function that the transmission line performs. Moreover, our idea could be realized as an electronic circuit involving memcapacitive devices, resistors and inductors. In fact, the simulations presented below are based on a circuit model of the transmission line [1]. Therefore, our results are applicable to both the line itself and its electronic circuit realization.Let us consider the transmission line positioned along the y-axis as shown in Fig. 1(a). We assume that the electromagnetic field of the line satisfies the quasistationarity conditions with respect to the transverse dimensions of the line (in partic...

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“…In particular, oxygen vacancy migration in TiO 2 memristors can be described as a hopping process between potential minima [26]. Moreover, a strained elastic membrane memcapacitor (memory capacitor) [27] is also described by equations similar to (3). These connections give physical grounding to our choice of memristive function.…”

Section: (X V M T)v M (T)mentioning

confidence: 99%

Chaotic memristor

et al. 2011

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We suggest and experimentally demonstrate a chaotic memory resistor (memristor). The core of our approach is to use a resistive system whose equations of motion for its internal state variables are similar to those describing a particle in a multi-well potential. Using a memristor emulator, the chaotic memristor is realized and its chaotic properties are measured. A Poincaré plot showing chaos is presented for a simple nonautonomous circuit involving only a voltage source directly connected in series to a memristor and a standard resistor. We also explore theoretically some details of this system, plotting the attractor and calculating Lyapunov exponents. The multi-well potential used resembles that of many nanoscale memristive devices, suggesting the possibility of chaotic dynamics in other existing memristive systems.

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Solid-state memcapacitive system with negative and diverging capacitance

Cited by 80 publications

References 30 publications

On the physical properties of memristive, memcapacitive and meminductive systems

On the physical properties of memristive, memcapacitive and meminductive systems

Reconfigurable transmission lines with memcapacitive materials

Chaotic memristor

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