Microcharacterization of electroluminescent diodes with the scanning electron microscope (SEM)

Balk, L.J.; Kubalek, E.; Menzel, Eberhard

doi:10.1109/t-ed.1975.18207

Cited by 16 publications

(4 citation statements)

References 3 publications

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“…Preferential etching is destructive since it destroys the surface of the substrate and often exhibits artifacts not representative of crystalline imperfections. Another particularly elegant technique to study dislocations is cathodoluminescence (1,2). Dislocations are revealed by cathodoluminescence due to the presence of nonradiative centers at the dislocation.…”

mentioning

confidence: 99%

“…The experimental apparatus usually used for cathodoluminescence (CL) consists of an electron-emission system and a monochromator for analysis of the wavelength of the emitted light, with corresponding photon counting electronics (1,2). The disadvantage of this experimental setup is that it exhibits poor sensitivity, and therefore requires very high primary beam currents and/or low temperature stage to increase the nonradiative lifetime.…”

mentioning

confidence: 99%

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A Novel Scheme for Detection of Defects in III–V Semiconductors by Cathodoluminescence

Marek

Geiss

Glassman

et al. 1985

J. Electrochem. Soc.

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confidence: 99%

mentioning

confidence: 99%

A Novel Scheme for Detection of Defects in III–V Semiconductors by Cathodoluminescence

Marek

Geiss

Glassman

et al. 1985

J. Electrochem. Soc.

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“…m e n t unless temperatures above 600~ a r e u s e d (4). The presence of such residual carbon contaminants across the interface of the grown layers results in the generation of defects and affects the surface morphologies of the grown layers (5).…”

Section: T Niina K Yoneda and T Todamentioning

confidence: 99%

Delineation of p‐n Junction in Thin InGaAsP Layers Using Chemical Etching

Lourenço¹

1983

J. Electrochem. Soc.

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A method for the delineation of the p-n junction inside the active layers of InGaAsP/InP double heterostructures is presented. A chemical etch used with illumination on a grooved sample canaccurately delineate the diffusion front of the p-dopant in quaternary layers. Using a conventional optical microscope, the techniqde can be used for active layers as thin as 0.1 ~m. Good correlation with scanning electron microscope techniques (EBIC) is observed. The technique presented here can easily be used as a routine step during wafer characterization.

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“…Electrical properties of semiconductor materials and devices can be effectively investigated by measurements of electron-beam-induced currents (EBIC). By this method, dislocations, striations, Schottky diodes, p n junctions, bipolar transistors and so on have been investigated (Balk er al 1975, Leamy 1982, Holt and Lesniak 1985, Kaufmann et al 1987. Investigations of semiconductor materials are carried out in order to control the material homogeneity and to obtain inFormations about electrical properties of structural defects such as dislocations.…”

Section: Introductionmentioning

confidence: 99%

Numerical simulation of electron-beam-induced gate currents in a GaAs MESFET. I. Theory and model

Kaufmann¹,

Balk²

1995

J. Phys. D: Appl. Phys.

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Electron-beam-induced current (EBIC) measurements can be used in order to investigate microscopic electrical properties of semiconductor materials and devices. However, for the estimation of material parameters and the unequivocal interpretation of EBIC micrographs, very often additional simulations are necessary. Up to now, these simulations have been carried out mostly using analytical models based on some restrictive simplifications. These models can only be used for simple specimen structures of high symmetry or for specimens that can be definitely separated into such simple structures. These models are not well suited to the simulation of electron beam currents in small devices such as MESFETs (metal-semiconductor field-effect transistors). Thus, we have used the more adaptable finite difference method for two-dimensional numerical simulations of electron-beam-induced gate currents in these devices. In this first part of the paper, the model and tools used are presented.

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Microcharacterization of electroluminescent diodes with the scanning electron microscope (SEM)

Cited by 16 publications

References 3 publications

A Novel Scheme for Detection of Defects in III–V Semiconductors by Cathodoluminescence

A Novel Scheme for Detection of Defects in III–V Semiconductors by Cathodoluminescence

Delineation of p‐n Junction in Thin InGaAsP Layers Using Chemical Etching

Numerical simulation of electron-beam-induced gate currents in a GaAs MESFET. I. Theory and model

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