1991
DOI: 10.1103/physreva.44.657
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Microcavity semiconductor laser with enhanced spontaneous emission

Abstract: A metal-clad optical waveguide with a semiconductor microcavity structure is proposed to increase the coupling efficiency of spontaneous emission into a lasing mode (spontaneous emission coefficient P) and to increase a total spontaneous emission rate simultaneously. Such a microcavity semiconductor laser with enhanced spontaneous emission has novel characteristics, including high quantum efficiency, low threshold pump rate, broad modulation bandwidth, and intensity noise reduced to below the shot-noise limit … Show more

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Cited by 279 publications
(145 citation statements)
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“…This suggests that there is more coupling of the spontaneous emission into the lasing modes with lower losses in the bigger samples. This behavior is consistent with previous descriptions that the lasing threshold power density ( P thr ) is inversely proportional to the β × Q product,48, 49 where the larger β and Q factors would mean a lower threshold.…”
Section: Resultssupporting
confidence: 92%
“…This suggests that there is more coupling of the spontaneous emission into the lasing modes with lower losses in the bigger samples. This behavior is consistent with previous descriptions that the lasing threshold power density ( P thr ) is inversely proportional to the β × Q product,48, 49 where the larger β and Q factors would mean a lower threshold.…”
Section: Resultssupporting
confidence: 92%
“…When the length of the cavity is equal to the half wavelength, the coherence between the spontaneous emission photons is obviously enhanced [132]. We consider an ideal microcavity, where all radiating photons are coupled into a single cavity resonant mode.…”
Section: Low Threshold Lasermentioning
confidence: 99%
“…Nanolaser emission properties WW Chow et al 2 of b in atomic-molecular-optical systems. 1,32 This aim is accomplished with a consistent derivation of photon correlations along with the equations of motion for carrier and photon populations. We also include a description of QD excitation via the surrounding QWs in terms of carrier injection, capture and escape, as well as inhomogeneous broadening due to QD size and composition fluctuations.…”
Section: Nanolaser Model Incorporating Semiconductor Quantum Opticsmentioning
confidence: 99%