Micro-Raman and Resistance Measurements of Epitaxial La0.7Sr0.3MnO3 Films

Dediu, V.; López, Juan Camilo; Matacotta, F.C.; Nozar, P.; Ruani, G.; Zamboni, Riccardo; Taliani, C.

doi:10.1002/(sici)1521-3951(199909)215:1<625::aid-pssb625>3.0.co;2-g

Cited by 29 publications

(19 citation statements)

References 6 publications

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“…where t D is deposition time. This procedure was found to increase considerably the reproducibility of the main film parameters and was tentatively ascribed to the removal of the over-oxygenation [20].…”

Section: Methodsmentioning

confidence: 79%

“…Among different ablation techniques, several modifications of the pulsed electron deposition (PED) method are recently successfully competing in the deposition of oxide superconductors and manganites with the most widespread ablation techniquePulsed Laser Deposition (PLD). Thus the Channel Spark Ablation (CSA) [16] has proved the deposition of high quality thin films of simple oxides, such as Al 2 O 3 [17,18], and complex oxides such as cuprates [19] and manganites [20]. Previous X-ray Diffraction and Raman investigations on selected samples of different thicknesses have ALWAYS indicated (001) growth orientation on both STO (100) and NGO (110).…”

Section: Introductionmentioning

confidence: 99%

“…Especially successful was the application of CSA to LSMO films, where excellent magnetic, electric and structural properties have been achieved [20][21][22].…”

Section: Introductionmentioning

confidence: 99%

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Conditions for the growth of smooth La0.7Sr0.3MnO3 thin films by pulsed electron ablation

et al. 2013

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We report on the optimisation of the growth conditions of manganite La 0.7 Sr 0.3 MnO 3 (LSMO) thin films prepared by Channel Spark Ablation (CSA). CSA belongs to pulsed electron deposition methods and its energetic and deposition parameters are quite similar to those of pulsed laser deposition. The method has been already proven to provide manganite films with good magnetic properties, but the films were generally relatively rough (a few nm coarseness). Here we show that increasing the oxygen deposition pressure with respect to previously used regimes, reduces the surface roughness down to unit cell size while maintaining a robust magnetism. We analyse in detail the effect of other deposition parameters, like accelerating voltage, discharging energy, and temperature and provide on this basis a set of optimal conditions for the growth of atomically flat films. The thicknesses for which atomically flat surface was achieved is as high as about 10-20 nm, corresponding to films with room temperature magnetism. We believe such magnetic layers represent appealing and suitable electrodes for various spintronic devices.

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Section: Methodsmentioning

confidence: 79%

Section: Introductionmentioning

confidence: 99%

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Conditions for the growth of smooth La0.7Sr0.3MnO3 thin films by pulsed electron ablation

et al. 2013

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“…The aluminum oxide layer was deposited ex situ directly by channel spark method. 11 In order to investigate the buried Co/ Al 2 O 3 / Alq 3 interface, first a 15 nm thick Alq 3 film was deposited on a sputter-cleaned Si-substrate, followed by deposition of about 2 nm Al 2 O 3 buffer layer and 20 nm Co. Afterward, the sample was take out from vacuum and a simple ex situ peeloff technique was adopted to turn over the sample.…”

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confidence: 99%

The role of aluminum oxide buffer layer in organic spin-valves performance

Zhan

Liu

Carlegrim

et al. 2009

Applied Physics Letters

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The electronic structures of the 8-hydroxyquinoline-aluminum (Alq(3))/Al2O3/Co interfaces were studied by photoelectron spectroscopy. A strong interface dipole was observed, which leads to a reduction in the electron injection barrier. The x-ray photoelectron spectroscopy spectra further indicate that the Al2O3 buffer layer prevents the chemical interaction between Alq(3) molecules and Co atoms. X-ray magnetic circular dichroism results demonstrate that a Co layer deposited on an Al2O3 buffered Alq(3) layer shows better magnetic ordering in the interface region than directly deposited Co, which suggests a better performance of spin valves with such a buffer layer. This is consistent with the recent results from [Dediu , Phys. Rev. B 78, 115203 (2008)].

Original Publication:Yiqiang Zhan, Xianjie Liu, Elin Carlegrim, Fenghong Li, I Bergenti, P Graziosi, V Dediu and Mats Fahlman, The role of aluminum oxide buffer layer in organic spin-valves performance, 2009, APPLIED PHYSICS LETTERS, (94), 5, 053301.http://dx.doi.org/10.1063/1.3078274Copyright: American Institute of Physicshttp://www.aip.org/

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“…This limited pressure range is, however, suitable for growing thin films of complex oxides with different physical properties. Since the first report [19] concerning deposition of superconducting YBaCuO thin films by pseudo spark ablation the PED was used to grow thin films of oxide materials such as high temperature superconductors [20,23], hydroxyapatite, bio-active glasses, organic materials [20], colossal magneto-resistance materials [24], SnO 2 [25], zirconium tin titanate [26] and ZnO [27].…”

Section: Introductionmentioning

confidence: 99%

Deposition Of Oxide And Intermetallic Thin Films By Pulsed Laser (PLD) And Electron Beam (PED) Methods

Kusiński¹,

Kopia²,

Cieniek³

et al. 2015

Archives of Metallurgy and Materials

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In this work the pulsed laser deposition (PLD) and the pulsed electron beam deposition (PED) techniques were used for fabrication of Mo-Bi 2 O 3 , La 1-x Sr x CoO 3 , La 1-x Ca x CoO 3 and Al-Mg thin films. An influence of ablation process basic parameters on the coatings structure and properties was discussed. Two types of laser ablation systems were applied: one equipped with a KrF excimer and second with a Q-switched Nd:YAG. Films were deposited on Si and MgO substrates. Scanning (SEM) and transmission (TEM) electron microscopy, atomic force microscopy (AFM) as well as X-ray diffraction (XRD) were used for structural analysis. Investigations focused on structure and chemical composition showed that smooth and dense thin films with nanocrystalline structure, preserving the composition of the bulk target, could be obtained by the both PLD and PED techniques. Research study showed that by a proper selection of PLD and PED process parameters it was possible to deposit films with significantly decreased amount and size of undesirably nanoparticulates.Keywords: PLD, PED, thin films, structure, doped oxidesOsadzanie laserem impulsowym (PLD) oraz osadzanie impulsową wiązka elektronową (PED) wykorzystane zostało do wytwarzania cienkich filmów typu: Mo-Bi 2 O 3 , La 1-x Sr x CoO 3 , La 1-x Ca x CoO 3 oraz Al-Mg. Dyskutowano wpływ podstawowych parametrów procesu ablacji na strukturę i właściwości uzyskiwanych powłok. Wykorzystane zostały dwa typy systemów do ablacji; jeden z ekscymerowym laserem KrF i drugi na bazie lasera Nd:YAG z modulatorem dobroci (Q-Switch). Filmy osadzano na podłożu Si i MgO. Skaningowa (SEM) i transmisyjna (TEM) mikroskopia elektronowa, mikroskopia sił atomowych (AFM), oraz dyfrakcja rentgenowska (XRD) wykorzystana została do analizy strukturalnej. Badania skoncentrowane na strukturze i skła-dzie chemicznym wykazały jednorodną i zwartą budowę cienkich nanokrystalicznych filmów uzyskanych metodami PLD i PED utrzymujących skład odparowywanych tarcz. Wykazano doświadczalnie, że odpowiednie dobranie parametrów procesu pozwala otrzymywać filmy o istotnym zminimalizowaniu ilości i wymiarów niekorzystnych nanocząstek w powłoce.

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Micro-Raman and Resistance Measurements of Epitaxial La0.7Sr0.3MnO3 Films

Cited by 29 publications

References 6 publications

Conditions for the growth of smooth La0.7Sr0.3MnO3 thin films by pulsed electron ablation

Conditions for the growth of smooth La0.7Sr0.3MnO3 thin films by pulsed electron ablation

The role of aluminum oxide buffer layer in organic spin-valves performance

Deposition Of Oxide And Intermetallic Thin Films By Pulsed Laser (PLD) And Electron Beam (PED) Methods

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