We report on efficient spin polarized injection and transport in long ͑10 2 nm͒ channels of Alq 3 organic semiconductor. We employ vertical spin valve devices with a direct interface between the bottom manganite electrode and Alq 3 , while the top-electrode geometry consists of an insulating tunnel barrier placed between the "soft" organic semiconductor and the top Co electrode. This solution reduces the ubiquitous problem of the so-called ill-defined layer caused by metal penetration, which extends into the organic layer up to distances of about 50-100 nm and prevents the realization of devices with well-defined geometry. For our devices the thickness is defined with an accuracy of about 2.5 nm, which is near the Alq 3 molecular size. We demonstrate efficient spin injection at both interfaces in devices with 100-and 200-nm-thick channels. We solve one of the most controversial problems of organic spintronics: the temperature limitations for spin transport in Alq 3 -based devices. We clarify this issue by achieving room-temperature spin valve operation through the improvement of spin injection properties of both ferromagnetic/Alq 3 interfaces. In addition, we discuss the nature of the inverse sign of the spin valve effect in such devices proposing a mechanism for spin transport.

The Internet of Things (IoT) has a broad vision of connecting every single object in the world to form one network. Flexible electronic devices, including RFIDs, sensors, memory devices, displays and power sources, are considered to be the technological basis of the IoT. The development of flexible electronic devices has been extremely rapid in the last decade. Many novel applications have been demonstrated, showing a strong potential impact on human life. In this review, we will summarize the recent progress in the research of flexible electronic devices and related flexible material within the framework of the IoT.

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We have studied the electronic and magnetic properties of the interface between C60 molecules and a Fe(001) surface. X-ray absorption spectroscopy and x-ray magnetic circular dichroism studies of C60 monolayers on Fe(001) surfaces show that hybridization between the frontier orbitals of C60 and continuum states of Fe leads to a significant magnetic polarization of C60 π∗-derived orbitals. The magnitude and also the sign of this polarization were found to depend markedly on the excitation energy. These observations underline the importance of tailoring the interfacial spin polarization at the Fermi level of ferromagnet/organic semiconductor interfaces for applications in organic spintronics.

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