Micro Raman and Photoluminescence Spectroscopy of Nano-Porous <i>n</i> and <i>p</i> Type GaN/Sapphire(0001)

Ingale, Alka; Pal, Sujay; Dixit, V. K.; Tiwari, Pragya

doi:10.1166/jnn.2007.792

Cited by 3 publications

(2 citation statements)

References 13 publications

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“…This result further indicated that the swelling behavior should be a common case in GaN-based materials under FIB irradiation. The reason why p-GaN is more likely to swell can be attributed to the fact that p-type GaN is more disordered than n-type GaN due to heavy Mg doping [24], and disintegration of Ga from the lattice is easier. Whether the swelling effect is emphasized or suppressed depends not only on the beam dwell time but also on the dopant type/concentration.…”

Section: Resultsmentioning

confidence: 99%

Anomalous formation of InGaN/GaN multiple-quantum-well nanopillar arrays by focused ion beam milling

Liu

Hsueh

et al. 2007

Nanotechnology

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A GaN swelling–milling competition phenomenon was found under focused ion beam milling. Tuning the beam dwell time or introducing dopants into GaN is able to control the degree of GaN swelling, which makes feasible the writing of large-area nanopillar arrays. High-aspect-ratio InGaN/GaN MQW nanopillars were accordingly fabricated by a self-masking process where the tops of the p-GaN tips were swollen during milling. The shadowing effect from the swollen tops induced only minimal damage to the MQWs, with the cathodoluminescence (CL) emission peak of the InGaN/GaN MQWs showing a blue shift of about 35 meV compared with that of the as-grown wafer.

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Section: Resultsmentioning

confidence: 99%

Anomalous formation of InGaN/GaN multiple-quantum-well nanopillar arrays by focused ion beam milling

Liu

Hsueh

et al. 2007

Nanotechnology

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“…In the photochemically-assisted environment, the location of the etching will give priority to the dislocation area, thus eliminating the dislocation and forming pores deep into the GaN at the current location. The phenomenon of phonon frequency reduction accompanied by peak displacement can be found in the generated NP-GaN under the Raman spectrum and calculated according to the stress relaxation formula [34]…”

Section: Feature Of Np-ganmentioning

confidence: 99%

The development and applications of nanoporous gallium nitride in optoelectronics: a review

Ying

Liang

Guo

et al. 2023

Semicond. Sci. Technol.

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The development of nanoporous gallium nitride has widened the material properties and applications in third generation semiconductor area. Nanoporous gallium nitride has been used in laser emitters, light-emitting diodes, optical sensors, and optical energy storage devices. In this paper, we reviewed the most recent progress in the nanoporous GaN field by electrochemical etching. The properties of etched GaN have many superior properties compared with original GaN templates, such as stronger photoluminescence intensity, thermal conductivity, piezo-electricity, more accessible area, stress relief and refractive index. These advantages will make GaN more widely used in the field of optics and optoelectronics. Pore formation can be controlled by adjusting the applied potential and etching time. The nanoporous GaN makes the material of GaN have broader application prospects. We introduced in detail the application prospects of different GaN based processes and subsequent application methods in optoelectronics, sensors, and materials themselves. This review will help to improve further development of nanoporous GaN applications.

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Low- and high-density InAs nanowires on Si(0 0 1) and their Raman imaging

Pal

Singh

Dixit

et al. 2012

Semicond. Sci. Technol.

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Micro-Raman imaging along with other techniques are applied to study the morphology, structure and crystalline quality of various types of InAs nanowires (NWs). The NWs of low and high densities are formed using metal organic vapor phase epitaxy. Raman mapping is effectively used as a local probe to gain information about the structure and crystalline quality of low-density NWs where the conventional characterization techniques are not very useful. However, for high-density NWs, the image and crystalline quality obtained from the LO phonon strongly corroborate with scanning electron microscopy and x-ray diffraction (XRD) results, respectively. These low-density (10 4 cm −2 ) and high-density (10 8 cm −2 ) NWs are grown on Si(0 0 1) under various growth conditions such as catalyst-assisted and catalyst-free growth, growth on native oxide-covered and oxide-cleaned Si, grooved Si surfaces and also varying the V/III ratio and growth temperature. NWs (1 μm long and 50-100 nm wide) with high density and tapered NWs (50-80 μm long and 200-500 nm wide at the tip) with low density are formed under different growth conditions. The growth of hillock-and wire-like structures is observed under the same growth condition. Raman, XRD, scanning electron microscopy and atomic force microscopy analyses confirm that the hillocks are grown along the 0 0 1 direction, whereas the wires are grown along [1 1 0] directions in the plane of Si(0 0 1). Furthermore, the Raman analysis of these NWs confirms that the smaller NWs have much better crystalline quality (half-width of LO phonon frequency ∼6 cm −1 ) compared to the larger NWs (half-width of LO phonon frequency ∼15 cm −1 ) although both NWs are oriented with the Si(0 0 1) surface.

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Micro Raman and Photoluminescence Spectroscopy of Nano-Porous n and p Type GaN/Sapphire(0001)

Cited by 3 publications

References 13 publications

Anomalous formation of InGaN/GaN multiple-quantum-well nanopillar arrays by focused ion beam milling

Anomalous formation of InGaN/GaN multiple-quantum-well nanopillar arrays by focused ion beam milling

The development and applications of nanoporous gallium nitride in optoelectronics: a review

Low- and high-density InAs nanowires on Si(0 0 1) and their Raman imaging

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