Micro-machining of [100] Si using a novel ultra-violet induced anisotropic etching in HNA solution

Haji, Saber; Zandi, Kazem; Mohajerzadeh, S.; Naeli, Kianoush; Soleimani, Ebrahim

doi:10.1109/icm.2001.997495

Cited by 1 publication

(1 citation statement)

References 8 publications

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“…For this etching technology, the process is relatively simple and convenient because no expensive and specially designed equipment is needed. And due to its alkali-free etching system, isotropic wet etching has a better compatibility with CMOS (complementary metal oxide semiconductor) fabrication procedure than conventional anisotropic etching [1][2][3]. Thus Isotropic wet etching is still playing a very important role in silicon micromachining although now newly arisen etching technologies emerge in an endless stream.…”

Section: Introductionmentioning

confidence: 99%

Multilayer Masking Technique for Deep Isotropic Silicon Wet Etching

Zhang

2012

AMM

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A multilayer masking technique was presented aiming at the requirements of deep isotropic silicon wet etching. Because the processing time of deep etching is relatively long and etching rate is high, it is very hard to achieve satisfying etching result by using conventional photoresist or metal single layer mask. Thus multilayer mask consisting of photoresist and metal layers is fabricated to exert respective advantages and avoid disadvantages. Based on its excellent chemical and thermal stabilities and high viscosity, Su-8 was selected as the material of photoresist layer. The metal layer was fabricated by chromium because it could alleviate the undercut problem in great extent. Results of etching experiment indicated that no obvious defect of pinhole or crack was found on this multilayer mask after etching to the depth of about 300μm. Thus it is undoubted this masking technology is capable for deep silicon wet etching.

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Section: Introductionmentioning

confidence: 99%

Multilayer Masking Technique for Deep Isotropic Silicon Wet Etching

Zhang

2012

AMM

View full text Add to dashboard Cite

show abstract

Micro-machining of [100] Si using a novel ultra-violet induced anisotropic etching in HNA solution

Cited by 1 publication

References 8 publications

Multilayer Masking Technique for Deep Isotropic Silicon Wet Etching

Multilayer Masking Technique for Deep Isotropic Silicon Wet Etching

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