Micro-machine fabrication using diamond-like carbon films

Mousinho, Ana Paula; Mansano, Ronaldo Domingues; Massi, M.; Jaramillo, Juan José

doi:10.1016/s0925-9635(02)00219-4

Cited by 27 publications

(16 citation statements)

References 11 publications

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“…Silicon does not normally form π bonds. Based on an earlier model that suggested that a-C:H films consist mainly of sp 2 bonded planar clusters, which connect to each other by sp 2 and sp 3 bonds, 17 the present authors proposed based on Raman spectroscopy investigation that the modification of the a-C:H structure by silicon leads to two interpenetrating network based on silicon and carbon. 17 This structural modification was deduced to lead to both structural defects identified through Raman peak shifts associated with scattering from phonons with k-values further away from the Brillouin zone centre and the presence of additional vibrational density of states due to Si-C and Si-H bond vibration, which lead to a local distortion of the network.…”

Section: A Raman Spectroscopymentioning

confidence: 90%

“…Micro-gears and micro-channels have already been fabricated from DLC films by lithography and plasma-etching. 2 It has been reported that stiction, friction and wear are the major sources of failure of MEMS devices. Stiction and wear have been identified as the major reasons for the failure of integrated accelerometers used in the development of air bags in automobiles and digital light processing (DLP) equipment.…”

Section: Introductionmentioning

confidence: 99%

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The effect of PECVD plasma decomposition on the wettability and dielectric constant changes in silicon modified DLC films for potential MEMS and low stiction applications

2012

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We have carried out investigations aimed at understanding the mechanism responsible for a water contact angle increase of up to ten degrees and a decrease in dielectric constant in silicon modified hydrogenated amorphous carbon films compared to unmodified hydrogenated amorphous carbon films. Our investigations based on surface chemical constituent analysis using Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), SIMS, FTIR, contact angle / surface energy measurements and spectroscopic ellipsometry suggests the presence of hydrophobic chemical entities on the surface of the films. This observation is consistent with earlier theoretical plasma chemistry predictions and observed Raman peak shifts in the films. These surface hydrophobic entities also have a lower polarizability than the bonds in the un-modified films thereby reducing the dielectric constant of the silicon modified films measured by spectroscopic ellipsometry. Ellipsometric dielectric constant measurement is directly related to the surface energy through Hamaker's constant. Our current finding is expected to be of benefit to understanding stiction, friction and lubrication in areas that range from nano-tribology to microfluidics.

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Section: A Raman Spectroscopymentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

The effect of PECVD plasma decomposition on the wettability and dielectric constant changes in silicon modified DLC films for potential MEMS and low stiction applications

2012

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“…However, this model arose from some early estimates of the displacement threshold in graphite and diamond of 25 and 80 eV respectively. The more recent direct measurement find a similar values for graphite (35 eV) and diamond (37)(38)(39)(40)(41)(42)(43)(44)(45)(46)(47) eV) [26,27], therefore preferential displacement is unlikely.…”

Section: (H) Film Evolutionmentioning

confidence: 92%

“…The etching rate is known to increase with the RF power [43,46]. Mousinho et al [46] also found that etching rate can increase if the process pressure is increased, but the scattering of the incoming ions for gas phase molecules causes lower anisotropy. Therefore, the ideal condition is low pressure and high RF power.…”

Section: Reactive Ion Etchingmentioning

confidence: 99%

Silicon incorporated amorphous carbon films for BioMEMS application

Ong¹

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Amorphous carbon (a-C) or most commonly known as diamond-like carbon (DLC) is traditionally used as a protective or passivation coatings. The prospect of a-C, specifically low stress or stress free film for use in microelectromechanical systems (MEMS) has stirred up quite an interest in the scientific community. In the asdeposited state, the material exhibits extremely high compressive stress. In order for the micromachined structures to work, the films must have very low stress and very low stress gradients. Preliminary studies have shown Si doping not only reduces the stress, it can improve the haemocompatibility of a-C as well. Therefore, Si doped a-C is suitable for MEMS devices in medical applications. Amorphous carbon containing Si (a-C(Si)) exhibits some very desirable characteristics. However, many concerns (mechanical, biological and microfabrication) are still unaddressed, and the fundamentals of the current research findings are still unclear. In order to understand this material and for its successful incorporation into biomedical MEMS devices, the influences of Si incorporation into a-C network are studied in detail in this project. Amorphous carbon films containing different concentration of Si are deposited via magnetron sputtering of graphite and Si targets. Atomic bonding configurations are analyzed, and their influences on the mechanical and biological properties are studied. The best a-C(Si) in terms of its bonding and mechanical characteristics is selected to undergo thermal treatment in order to further study the temperature effect on the various properties and behaviors. The incorporation of Si into the a-C network alters the atomic bonding configurations. C-Si sp 3 bonds form through breaking up C=C sp 2 aromatic ring bonding structures. Therefore, with increasing Si, C-Si bond concentration increases while that of C=C bond decreases, and the concentration of CC sp 3 is not affected. Amorphous carbon film containing ~37at.% Si is found to have the highest sp 3 bonding fraction. Post-deposition annealing of a-C(Si37.6at.%) shows

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“…Dadas as propriedades similares ao diamante, veja Tabela 2, o DLC também é um material promissor para coberturas em microdispositivos. Exemplos de aplicações para esse tipo de recobrimento incluem superfícies sujeita ao atrito e desgaste58,59 , tal como disco rígido, engrenagens, pistões, e prótese para implante.Um dos mais importantes usos de filmes de DLC é como camada de proteção sobre discos rígidos60,61,62 . O armazenamento de dados do disco é feito por uma liga magnética Co-Cr-Pt, na forma de filme fino.…”

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Análise quantitativa na fidelidade de microestruturas em réplicas de diamante e recobrimentos de DLC.

Martins¹

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Micro-machine fabrication using diamond-like carbon films

Cited by 27 publications

References 11 publications

The effect of PECVD plasma decomposition on the wettability and dielectric constant changes in silicon modified DLC films for potential MEMS and low stiction applications

The effect of PECVD plasma decomposition on the wettability and dielectric constant changes in silicon modified DLC films for potential MEMS and low stiction applications

Silicon incorporated amorphous carbon films for BioMEMS application

Análise quantitativa na fidelidade de microestruturas em réplicas de diamante e recobrimentos de DLC.

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