Micro Four-Point Probe with High Spatial Resolution for Ion Implantation and Ultra-Shallow Junction Characterization

Kjær, Daniel; Lin, Rong; Petersen, Dirch Hjorth; Kopalidis, Peter M.; Eddy, R.; Walker, David A.; Egelhoff, William F.; Pickert, Larry

doi:10.1063/1.3033583

Cited by 15 publications

(10 citation statements)

References 3 publications

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“…Compared to the classic theory of four-point probe measurements [102], substantial progress have been made with respect to error-correction and sensitivity analysis, as well as new measurement concepts such as the micro Hall method [103] which is also applicable to graphene. M4PP today ranks with fixed lithographic electrodes in terms of precision and repeatability for both sheet resistance and Hall effect measurements [104], while being non-invasive and superior in terms of throughput. Automated M4PP mapping was first introduced for mm-size self-assembled poly-thiophene monolayer [99] and later used for mapping of the carrier density and mobility of graphene [24][25][26][27].…”

Section: Micro-four Point Probes (M4pp)mentioning

confidence: 99%

Mapping the electrical properties of large-area graphene

et al. 2017

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The significant progress in terms of fabricating large-area graphene films for transparent electrodes, barriers, electronics, telecommunication and other applications has not yet been accompanied by efficient methods for characterizing the electrical properties of large-area graphene. While in the early prototyping as well as research and development phases, electrical test devices created by conventional lithography have provided adequate insights, this approach is becoming increasingly problematic due to complications such as irreversible damage to the original graphene film, contamination, and a high measurement effort per device. In this topical review, we provide a comprehensive overview of the issues that need to be addressed by any large-area characterisation method for electrical key performance indicators, with emphasis on electrical uniformity and on how this can be used to provide a more accurate analysis of the graphene film. We review and compare three different, but complementary approaches that rely either on fixed contacts (dry laser lithography), movable contacts (micro four point probes) and non-contact (terahertz timedomain spectroscopy) between the probe and the graphene film, all of which have been optimized for maximal throughput and accuracy, and minimal damage to the graphene film. Of these three, the main emphasis is on THz time-domain spectroscopy, which is non-destructive, highly accurate and allows both conductivity, carrier density and carrier mobility to be mapped across arbitrarily large areas at rates that by far exceed any other known method. We also detail how the THz conductivity spectra give insights on the scattering mechanisms, and through that, the microstructure of graphene films subject to different growth and transfer processes. The perspectives for upscaling to realistic production environments are discussed. TOPICAL REVIEWOriginal content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence.

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Section: Micro-four Point Probes (M4pp)mentioning

confidence: 99%

Mapping the electrical properties of large-area graphene

et al. 2017

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“…Micro-fourpoint probe (m4pp) measurements were conducted using a Capres microHALL ® -M300 system to obtain the sheet resistance (R s ) of the samples and estimate the resistivity of the grown layers. 20 Micro-Hall effect (MHE) measurements were performed using a Capres CIPTech ® -M300. Collinear m4pp in the vicinity of an insulating boundary were performed on samples R and B1 (pre-and postsurface cleaning) to assess the holes concentrations (p H ) and the Hall mobilities (μ H ),.…”

Section: Methodsmentioning

confidence: 99%

B and Ga Co-Doped Si_1−xGe_x for p-Type Source/Drain Contacts

Rengo¹,

Porret²,

Hikavyy³

et al. 2022

ECS J. Solid State Sci. Technol.

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Contact resistivity reduction at the source/drain contacts is one of the main requirements for the fabrication of future MOS devices. Current research focuses on methods to increase the active doping concentration near the contact region in silicon-germanium S/D epilayers. A possible approach consists in adding co-dopants during the epitaxy process. In the case of p-MOS, gallium can be used in addition to boron. In this work, the properties of in situ Ga and B co-doped Si0.55Ge0.45 layers are discussed. The surface morphologies, layer compositions, and structural and electrical material properties are described and compared with those of a B-doped Si0.55Ge0.45 reference layer. Ga segregation occurring at the growth surface is evidenced. Post-epi surface cleans are required to obtain the correct Ga profiles in the Si1-xGex layers from secondary ion mass spectrometry, otherwise altered by surface Ga knock-on. The layer morphologies, crystalline quality, and electrical properties show a progressive degradation with increasing Ga dose. Finally, specific titanium-Si1-xGex:B(:Ga) contact resistivity values have been extracted using the multi-ring circular transmission line method. The contact resistivity is lower for the Ga co-doped samples, with the lowest value (< 3 x 10-9 Ω.cm2) being obtained for the sample grown with the lowest Ga-precursor flow.

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“…Micro-Four Point Probes (MFPP) measurements were performed at RT by using CAPRES SEM module [8]. The set-up consists of a video light microscope with high magnification and micron size probes with electrode pitch of 10 µm.…”

Section: Methodsmentioning

confidence: 99%

Plasma Immersion Ion Implantation Applied To N[sup +]P Junction Realisation In 4H-SiC

Ottaviani

Biondo²,

Daineche

et al. 2011

AIP Conference Proceedings

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This paper focuses on the process giving rise to Nitrogen introduction into SiC p-type epitaxial layers. Standard ion implantation and PULSION TM processes are performed at two distinct energies (700 eV and 7 keV), followed by an annealing at 1600°C in a furnace specifically adapted to SiC material, aiming at creating thin n + p junctions. The doping profiles issued from the implantations show an important channeling effect for all samples. Surface roughness and Nitrogen activation after annealing are studied using AFM and Micro-Four Point Probe means, respectively. A better surface morphology is found on plasma-implanted samples, with a higher sheet resistance (in comparison with standard samples) which could either be related to a lower implanted dose and/or to a lower dopant activation.

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Micro Four-Point Probe with High Spatial Resolution for Ion Implantation and Ultra-Shallow Junction Characterization

Cited by 15 publications

References 3 publications

Mapping the electrical properties of large-area graphene

Mapping the electrical properties of large-area graphene

B and Ga Co-Doped Si_1−xGe_x for p-Type Source/Drain Contacts

Plasma Immersion Ion Implantation Applied To N[sup +]P Junction Realisation In 4H-SiC

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Micro Four-Point Probe with High Spatial Resolution for Ion Implantation and Ultra-Shallow Junction Characterization

Cited by 15 publications

References 3 publications

Mapping the electrical properties of large-area graphene

Mapping the electrical properties of large-area graphene

B and Ga Co-Doped Si1−xGex for p-Type Source/Drain Contacts

Plasma Immersion Ion Implantation Applied To N[sup +]P Junction Realisation In 4H-SiC

Contact Info

Product

Resources

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B and Ga Co-Doped Si_1−xGe_x for p-Type Source/Drain Contacts