2009
DOI: 10.1016/j.electacta.2008.11.003
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Micro-EIS of anodic thin oxide films on titanium for capacitor applications

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Cited by 55 publications
(47 citation statements)
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References 38 publications
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“…Such a behav iour has been frequently observed for semiconducting passive films grown on a number of valve metal ( [3] and refs. therein) and very recently it has been observed also on amorphous TiO 2 film grown on dif ferent single grains of pure (99.9%) titanium [29]. The frequency dependence of the capacitance is reflected in Mott-Schottky plots usually showing both donor density and flat band potential values frequency dependent [4,[29][30][31][32].…”
Section: Electrochemical Impedance Spectroscopy (Eis)mentioning
confidence: 91%
See 1 more Smart Citation
“…Such a behav iour has been frequently observed for semiconducting passive films grown on a number of valve metal ( [3] and refs. therein) and very recently it has been observed also on amorphous TiO 2 film grown on dif ferent single grains of pure (99.9%) titanium [29]. The frequency dependence of the capacitance is reflected in Mott-Schottky plots usually showing both donor density and flat band potential values frequency dependent [4,[29][30][31][32].…”
Section: Electrochemical Impedance Spectroscopy (Eis)mentioning
confidence: 91%
“…therein) and very recently it has been observed also on amorphous TiO 2 film grown on dif ferent single grains of pure (99.9%) titanium [29]. The frequency dependence of the capacitance is reflected in Mott-Schottky plots usually showing both donor density and flat band potential values frequency dependent [4,[29][30][31][32]. When this occurs for crystalline semiconductor/electrolyte junctions several physical explanations have been suggested in the literature as possible source of this dependence [33][34][35][36] [5,[16][17][18]37] that frequency dependent differential admittance val ues are theoretically expected for amorphous semi conductor passive film/electrolyte junction in agree ment with the theory of amorphous semiconductor Schottky barriers.…”
Section: Electrochemical Impedance Spectroscopy (Eis)mentioning
confidence: 95%
“…This result means that the dominant defects in all the passive films are oxygen vacancies and/or cation interstitials [46]. Such two linear regions at low and high potentials were reported to be attributed to the semiconducting behavior and dielectric character of the passive film, respectively [47]. In the present study, the linear region at low potential was chosen to calculate the semiconductor property parameters of the passive films formed on the tested samples.…”
Section: Mott-schottky Analysismentioning
confidence: 99%
“…The capacitance data were used to obtain a qualitative estimation of the dielectric permittivities of the anodic films after anodizing in the two acids. According to the calculation by T = εε 0 /C, 4 where T is the anodic film thickness (nm), ε is the dielectric permittivity of TiO 2 formed in each acid, ε 0 is the dielectric permittivity of free space (8.85 × 10 −12 F m −1 ) and C is the oxide capacitance (F cm −2 ) and the real film thickness measured by TEM, the dielectric permittivities of the anodic films formed after anodizing at 50 V in the sulfuric acid and phosphoric acid are calculated to be ∼77.6 and ∼62.4 respectively. The dielectric permittivity estimated by EIS Figure 8.…”
Section: X-ray Diffraction and X-ray Photoelectron Spectroscopy-diffmentioning
confidence: 99%
“…2 Further, the thickness of the anodic oxide layer has been shown to be a linear function of the applied voltage. [2][3][4][5] The anodic oxide film on titanium is basically amorphous in crystal structure and morphologically homogeneous. 6 Moreover, such an oxide layer provides excellent resistance to corrosion as indicated electrochemically by a low level of electronic conductivity, 7 thermodynamically great stability 8 and low ion-formation tendency in aqueous environments.…”
mentioning
confidence: 99%