2004
DOI: 10.1016/j.mejo.2003.12.001
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Micro cantilever probe array integrated with Piezoresistive sensor

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Cited by 18 publications
(6 citation statements)
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“…In addition, sensing static cantilever detection is difficult with this method. At present, most self-sensing cantilevers use a piezoresistive method for displacement measurement due to the simplification and compatibility of sensor integration [102,108,109]. A simple integration of piezoresistive sensors eliminates the need for optical alignment of the external readout.…”
Section: Integrated Cantilever Devices For Probing the Nanoscalementioning
confidence: 99%
See 1 more Smart Citation
“…In addition, sensing static cantilever detection is difficult with this method. At present, most self-sensing cantilevers use a piezoresistive method for displacement measurement due to the simplification and compatibility of sensor integration [102,108,109]. A simple integration of piezoresistive sensors eliminates the need for optical alignment of the external readout.…”
Section: Integrated Cantilever Devices For Probing the Nanoscalementioning
confidence: 99%
“…Due to increasingly demanding scientific and industrial requirements, smaller and highly efficient cantilevers for force-displacement detection and surface investigation have been developed using integrated cantilevers with sensors, actuators and heaters [109,113,114]. In addition to surface imaging, the well-known four-point probe has been minimized into a microcantilever-style probe to perform reliable measurements of electronic transport properties in semiconductors.…”
Section: Integrated Cantilever Devices For Probing the Nanoscalementioning
confidence: 99%
“…The stage is placed on a Seiko SPA-400 scanning probe microscopy (SPM). A kind of cantilever-tip SPM probe has been developed in our lab [32]. The nano tip can be controllably electric-heated within the time constant of microseconds.…”
Section: Characterizationmentioning
confidence: 99%
“…To our knowledge, the key point of MEMS technology is its high selectivity especially in the processes of anisotropic wet etching, sacrificial layer process and dry etching [30,51]. Anisotropic wet etching is based on the fact that different crystalline planes of silicon have different etch rates in alkaline solution, including KOH, tetramethylammonium hydroxide (TMAH), etc.…”
Section: Introductionmentioning
confidence: 99%