Micro- and Nanotechnology of Wide-Bandgap Semiconductors

Piotrowska, Anna; Kamińska, E.; Wojtasiak, Wojciech

doi:10.3390/electronics10040507

Cited by 3 publications

(4 citation statements)

References 13 publications

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“…Wide bandgap semiconductors (WBSs) are materials that have a larger energy bandgap than traditional semiconductors such as silicon (Si) and germanium (Ge). These materials offer a number of advantages in their use for controllable semiconductor switches in power electronics, including higher efficiency, higher operating temperatures, and higher withstand voltages and temperatures [15][16][17][18][19]. The main types of wide bandgap semiconductors include the following: − Silicon carbide (SiC) is known for its high thermal and chemical stability.…”

Section: Wide Bandgap Semiconductors In Power Electronic Devices and ...mentioning

confidence: 99%

Smart Energy Systems Based on Next-Generation Power Electronic Devices

Hinov

2024

Technologies

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Power electronics plays a key role in the management and conversion of electrical energy in a variety of applications, including the use of renewable energy sources such as solar, wind and hydrogen energy, as well as in electric vehicles, industrial technologies, homes and smart grids. These technologies are essential for the successful implementation of the green transition, as they help reduce carbon emissions and promote the production and consumption of cleaner and more sustainable energy. The present work presents a new generation of power electronic devices and systems, which includes the following main aspects: advances in semiconductor technologies, such as the use of silicon carbide (SiC) and gallium nitride (GaN); nanomaterials for the realization of magnetic components; using a modular principle to construct power electronic devices; applying artificial intelligence techniques to device lifecycle design; and the environmental aspects of design. The new materials allow the devices to operate at higher voltages, temperatures and frequencies, making them ideal for high-power applications and high-frequency operation. In addition, the development of integrated and modular power electronic systems that combine energy management, diagnostics and communication capabilities contributes to the more intelligent and efficient management of energy resources. This includes integration with the Internet of Things (IoT) and artificial intelligence (AI) for automated task solving and work optimization.

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Section: Wide Bandgap Semiconductors In Power Electronic Devices and ...mentioning

confidence: 99%

Smart Energy Systems Based on Next-Generation Power Electronic Devices

Hinov

2024

Technologies

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“…Consequently, comprehensive research was undertaken at ITE to better understand and control the processes of ohmic contact formation. The focus was on contacts to GaAs [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36], comparative studies involved contacts to InP, GaP, and GaSb [20,[37][38][39][40][41][42]. Metallizations were deposited by vacuum evaporation, and post-deposition heat treatments were performed in the flow of H 2 or H 2 /N 2 .…”

Section: Metallization and Processing Of Iii-v Semiconductor Structuresmentioning

confidence: 99%

“…Ternary phase diagrams were helpful in interpreting these data, if used carefully, as they refer to closed systems, while conventional contact annealing is performed in open systems where evaporation of group V elements is possible. The most noticeable effect of closing the contact system during heat treatment was observed for Au/GaAs contacts [19,20,40]. In an open system, gallium reacted with GaAs to form double phases (α-AuGa, Au 7 Ga 2 ), Au 2 Ga, AuGa), while arsenic evaporated through the metal layer at a higher rate than for the free GaAs surface.…”

Section: Metallization and Processing Of Iii-v Semiconductor Structuresmentioning

confidence: 99%

50 Years of Compounds Semiconductors at the Institute of Electron Technology, Warsaw

2022

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In 2022, we are celebrating the 50th anniversary of the "Jaszowiec" International School & Conference on the Physics of Semiconductors. One of the highlights of this anniversary was the reminiscence session at the Jaszowiec 2022 meeting, recalling the most important achievements in the field of semiconductor physics and technology in the institutions organising the Conference. This paper aims to highlight the accomplishments of the Institute of Electron Technology, Warsaw, with particular emphasis on II-VI and III-V compounds and their application in electronic and optoelectronic devices. Specifically, the review covers narrow-gap HgCdTe for galvanomagnetic devices, GaAs-, GaP-, InP-, and GaSbbased materials for optoelectronics and photonics, SiC and GaN for radio-frequency and high-power electronics, and finally ZnO and InGaZnO for transparent electronics and sensors. Research results on device physics, material development, device design, and processing are presented.

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“…This causes the technology processes and characterization procedures that are well known in silicon technology to often be inappropriate in the case of silicon carbide. Research on silicon-carbide-based semiconductor devices has been carried out in a number of scientific centers for many years [13][14][15]. As a result, rapid progress in the quality of fabricated SiC single crystals, as well as semiconductor devices built in that material, can be observed.…”

Section: Introductionmentioning

confidence: 99%

CAD Approach to Control High-Temperature Processes in SiC Technology

2022

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Manufacturing silicon carbide semiconductor devices may require high-temperature treatment in closed graphite reactors. This makes temperature control of processed SiC substrates difficult, since their temperature cannot be measured directly. As the monitoring of the SiC sample temperature is critically important for proper process flow, an indirect method involving the use of the CAD approach has been developed. A numerical model of a furnace reactor was created on the basis of the commercial ANSYS package, allowing for the simulation of thermal fields under given heat-dissipation conditions in the modeled area and in the presence of gaseous and liquid media participating in heat exchange and transport. Obtained simulation results remain very consistent with the reference temperature measurements of selected areas of the reactor. The model acts as an accurate tool for temperature distribution verification during the high-temperature annealing of and diffusion of dopants for silicon carbide.

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Micro- and Nanotechnology of Wide-Bandgap Semiconductors

Abstract: Gallium Nitride and Related Wide-Bandgap Semiconductors (WBS) have constantly received a great amount of attention in recent years [...]

Cited by 3 publications

References 13 publications

Smart Energy Systems Based on Next-Generation Power Electronic Devices

Smart Energy Systems Based on Next-Generation Power Electronic Devices

50 Years of Compounds Semiconductors at the Institute of Electron Technology, Warsaw

CAD Approach to Control High-Temperature Processes in SiC Technology

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