2015
DOI: 10.1016/j.mee.2015.03.067
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Micro and nanofabrication of SiGe/Ge bridges and membranes by wet-anisotropic etching

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Cited by 9 publications
(6 citation statements)
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“…Various Si and SiGe etching methods have been investigated during the last decade, including alkaline potassium hydroxide (KOH) and Tetramethylammonium hydroxide (TMAH: (CH 3 ) 4 N(OH)) based aqueous etchants. [2][3][4][5] KOH based chemistries showed good results in terms of Si:SiGe selectivities. 6 However, their use is problematic because of a possible degradation of CMOS devices due to alkali ions contamination.…”
mentioning
confidence: 98%
“…Various Si and SiGe etching methods have been investigated during the last decade, including alkaline potassium hydroxide (KOH) and Tetramethylammonium hydroxide (TMAH: (CH 3 ) 4 N(OH)) based aqueous etchants. [2][3][4][5] KOH based chemistries showed good results in terms of Si:SiGe selectivities. 6 However, their use is problematic because of a possible degradation of CMOS devices due to alkali ions contamination.…”
mentioning
confidence: 98%
“…Chemical wet etching methods can be categorized into two types: anistropic and isotropic [36,37]. Both processes have different etching rates which depend on the material properties of the sample.…”
Section: Chemical Wet Etchingmentioning
confidence: 99%
“…Microfabrication is usually achieved by reactive ion etching [10], which requires high investment in tools and maintenance. KOH-based wet etching [11,12] has been used for microfabrication in Si at micro-and nano-scale. However, the aspect ratio of etched trenches is limited by the etching rate ratio between different crystallographic orientations and only possible in simple geometries like linear gratings or crossed linear gratings defined by the direction of <111> crystallographic planes of Si.…”
Section: Introductionmentioning
confidence: 99%