Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs

Tanaka, Ryo; Takashima, S.; Ueno, Katsunori; Matsuyama, Haruo; Edo, Masaharu; Nakagawa, Kiyokazu

doi:10.7567/1882-0786/ab0c2c

Cited by 45 publications

(42 citation statements)

References 26 publications

(26 reference statements)

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“…Although attempts have been made to realize p-GaN via Mg ion-implantation, achieving efficient p-type conductivity through this route remains a challenge. [19][20][21][22][23][24][25][26][27][28][29] The success of this route mainly depends upon finding the optimum conditions, i.e., the concentration of Mg ions, choice of protection layer, and post-implantation annealing temperature. This high-temperature annealing of the Mg-implanted GaN layers with commonly used protection layers of SiO 2 , Si 3 N 4 , and AlN removes the crystal damages induced due to ion-implantation and facilitates the migration of Mg atoms to the desired substitutional Ga sites.…”

Section: Introductionmentioning

confidence: 99%

Influence of implanted Mg concentration on defects and Mg distribution in GaN

Kumar

Uzuhashi

et al. 2020

Journal of Applied Physics

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Efficient acceptor activation in gallium nitride (GaN) achieved through Mg ion-implantation depends mainly on the concentration of implanted Mg ions and the post-implantation annealing process. In this study, we conducted correlative scanning transmission electron microscopy, atom probe tomography, and cathodoluminescence (CL) measurements on Mg-implanted GaN layers with the implanted concentration ranging from 1 × 10 17 cm −3 to 1 × 10 19 cm −3 . It was found that at the implanted concentration of ∼1 × 10 18 cm −3 , Mg atoms were randomly distributed with defects likely to be vacancy clusters whereas at the implanted concentration of ∼1 × 10 19 cm −3 , Mg-enriched clusters and dislocation loops were formed. From the CL measurements, the donor-acceptor pair (DAP) emissions from the implanted and un-implanted regions are obtained and then compared to analyze Mg activation in these regions. In the sample with Mg ∼1 × 10 19 cm −3 , the existence of Mg-enriched clusters and dislocations in the implanted region leads to a weaker DAP emission, whereas the absence of Mg-enriched clusters and dislocations in the sample with Mg ∼1 × 10 18 cm −3 resulted in a relatively stronger DAP emission.

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Section: Introductionmentioning

confidence: 99%

Influence of implanted Mg concentration on defects and Mg distribution in GaN

Kumar

Uzuhashi

et al. 2020

Journal of Applied Physics

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“…In recent years, it has been reported that a p–n junction can be formed by Mg ion implantation by using a high‐quality free‐standing GaN substrate, and rectification characteristics and electroluminescence have been observed . In addition, the operation of a MOSFET using a Mg‐ion‐implanted layer has also been confirmed . One of the most serious problems of Mg ion implantation is the formation of V N , which cannot be repaired by postimplantation annealing.…”

Section: Introductionmentioning

confidence: 97%

Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Takahashi

Tanaka

Ando

et al. 2019

Physica Status Solidi (b)

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Herein, gallium nitride (GaN) samples implanted with magnesium (Mg) and fluorine (F) ions are investigated by photoluminescence (PL) measurements. In low‐temperature PL measurements, the characteristic green luminescence (GL) band attributable to nitrogen vacancies (VN) is observed in Mg‐ion‐implanted GaN. As VN are likely to act as donors, suppressing their formation is essential to realizing p‐type conductivity. The energy required for a F impurity to replace VN in GaN and eventually form F on a N site decreases when the Fermi level approaches the valence band maximum, and therefore F is employed as a subsequent implantation element to compensate for VN. The GL band peak disappears upon implanting Mg and F ions at a high temperature and adjusting the F concentration to an appropriate value. This result suggests that VN generated by Mg ion implantation can be suppressed using an element with a lower formation energy than that of VN.

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“…Gallium nitride (GaN) has many unique properties such as a wide direct band gap and high thermal conductivity. − GaN is used in high-temperature, high-power devices. − In such applications, proper doping is necessary to prepare GaN-based MOS-FET structures where carrier control of the source, drain, and gate is crucial. − In order to prepare high-quality GaN-based MOS-FET structures, the atomic structures and chemical states in active and inactive dopant sites in GaN should be clarified. Once the atomic structures and the chemical states of inactive dopant sites are clarified, we can have a strategy that vanishes or reduces the inactive sites of dopants.…”

Section: Introductionmentioning

confidence: 99%

Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN

Tang

Takeuchi

Tanaka

et al. 2022

ACS Appl. Electron. Mater.

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We employed photoelectron spectroscopy (PES) and photoelectron holography (PEH) to clarify the atomic structures and chemical states in the active and inactive dopant states of Mg-doped GaN. Due to the lack of available direct evidence, this has been a controversial issue. From PES, we found that two chemical states existed in the Mg-doped GaN: One is an active dopant state, and the other is an inactive state. We employed PEH to investigate the two observed chemical states, indicating that the active state could be attributed to a Mg atom substituting a Ga atom in the Mg-doped GaN structure (MgGa). The inactive state, on the other hand, was considered to be a disordered structure, an amorphous structure, defects, and/or MgGa bonding with a H atom in that structure.

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Mg implantation dose dependence of MOS channel characteristics in GaN double-implanted MOSFETs

Cited by 45 publications

References 26 publications

Influence of implanted Mg concentration on defects and Mg distribution in GaN

Influence of implanted Mg concentration on defects and Mg distribution in GaN

Suppression of Green Luminescence of Mg‐Ion‐Implanted GaN by Subsequent Implantation of Fluorine Ions at High Temperature

Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN

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