Mg-doped p-type β-Ga2O3 thin film for solar-blind ultraviolet photodetector

Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition

“…Figure 4b depicts high-resolution two quasi-symmetrical Ga 2p 1/2 and Ga 2p 3/2 peaks for Ga-O bonding at 1145.2 eV and 1118.4 eV with a separation distance of 26.8 eV, which is consistent with the binding energy of Ga 2p for doped β -Ga 2 O 3 [35, 36]. The weak energy peak for Ga 3d is centered at 21.1 eV, which is caused by the presence of Ga-O bond reported for p -type β -Ga 2 O 3 films [37], but not observed for the n- type β -Ga 2 O 3 structures [38]. The Ga 3d peak is asymmetrical, which was ascribed to the hybridization of Ga 3d and O 2s states near the valence band [39].…”

“…The enlarged energy peak for Ga 3d is presented in Fig 4e. Presence of Ga 3d peak in the spectrum is confirmation of the p -type conductivity for Ga 2 O 3 in the heterostructure, as being reported [37]. For further investigation of the conductivity type of 2D β–Ga 2 O 3 , additional 4.8-nm-thick Ga 2 O 3 samples were subjected to the Hall coefficient measurements at T = 25 °C.…”

β-Ga2O3 nanorod arrays with high light-to-electron conversion for solar-blind deep ultraviolet photodetection

“…ZnMgO alloys with a band gap in solar-blind region also suffer from the poor crystal quality due to the phase separation. [9][10][11] It is noticed that Ga 2 O 3 has a direct wide bandgap of $4.9 eV, directly corresponding to the wavelength less than 280 nm, 12 is an ideal solar-blind detection material without any doping and alloying process. Among all ve phases of Ga 2 O 3 (a, b, g, d and 3), the b-Ga 2 O 3 with monoclinic crystal structure is the thermally and chemically most stable phase, has been widely studied in solar-blind photodetectors.…”

Stabilization and enhanced energy gap by Mg doping in ε-phase Ga2O3 thin films

“…This will affect the crystal structure and optical properties of the Mg-doped Ga 2 O 3 films. Recently, Feng et al 14,15 have prepared the Mg-doped Ga 2 O 3 films on the MgO (110) and sapphire substrates by metal organic chemical vapor deposition (MOCVD) technique, and have studied the effects of Mg concentration and annealing on the film properties; Qian et al 16 successfully prepared Mg-doped Ga 2 O 3 p-type solar blind UV detectors. However, the effect of Mg doping on the phase transformation in Ga 2 O 3 films is still unknown.…”