Metrology of single-photon sources and detectors: a review

Chunnilall, Christopher J.; Degiovanni, I. P.; Kück, S.; Müller, Ingmar; Sinclair, Alastair G.

doi:10.1117/1.oe.53.8.081910

Cited by 138 publications

(87 citation statements)

References 200 publications

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“…In general, the radiometric quantity radiant flux [5][6][7], commonly referred to as optical power, can be realized using absolute radiation sources or detectors. Source-based realization of the absolute radiant power scale can be based on Planckian radiators [6][7][8], synchrotron radiation [6,7,[9][10][11], or photon pairs produced by parametric down-conversion [7,12,13]. Standard detectors, on the other hand, can be divided into two main categories based on their operation principle: thermal detectors sense the heating effect of optical radiation and quantum detectors, such as silicon photodiodes, convert photons into detected charge carriers.…”

Section: Introductionmentioning

confidence: 99%

Predictable quantum efficient detector based onn-type silicon photodiodes

et al. 2017

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Ikonen, E. (2017). Predictable quantum efficient detector based on n-type silicon photodiodes. Metrologia, 54(6) AbstractThe predictable quantum efficient detector (PQED) consists of two custom-made induced junction photodiodes that are mounted in a wedged trap configuration for the reduction of reflectance losses. Until now, all manufactured PQED photodiodes have been based on a structure where a SiO 2 layer is thermally grown on top of p-type silicon substrate. In this paper, we present the design, manufacturing, modelling and characterization of a new type of PQED, where the photodiodes have an Al 2 O 3 layer on top of n-type silicon substrate. Atomic layer deposition is used to deposit the layer to the desired thickness. Two sets of photodiodes with varying oxide thicknesses and substrate doping concentrations were fabricated. In order to predict recombination losses of charge carriers, a 3D model of the photodiode was built into Cogenda Genius semiconductor simulation software. It is important to note that a novel experimental method was developed to obtain values for the 3D model parameters. This makes the prediction of the PQED responsivity a completely autonomous process. Detectors were characterized for temperature dependence of dark current, spatial uniformity of responsivity, reflectance, linearity and absolute responsivity at the wavelengths of 488 nm and 532 nm. For both sets of photodiodes, the modelled and measured responsivities were generally in agreement within the measurement and modelling uncertainties of around 100 parts per million (ppm). There is, however, an indication that the modelled internal quantum deficiency may be underestimated by a similar amount. Moreover, the responsivities of the detectors were spatiallyOriginal content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. uniform within 30 ppm peak-to-peak variation. The results obtained in this research indicate that the n-type induced junction photodiode is a very promising alternative to the existing p-type detectors, and thus give additional credibility to the concept of modelled quantum detector serving as a primary standard. Furthermore, the manufacturing of PQEDs is no longer dependent on the availability of a certain type of very lightly doped p-type silicon wafers.

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Section: Introductionmentioning

confidence: 99%

Predictable quantum efficient detector based onn-type silicon photodiodes

et al. 2017

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“…Spontaneous four-wave mixing (SFWM) and spontaneous parametric down-conversion (SPDC) is a powerful tool for generating a wide class of non-classical states, in particular the single-photon or two-photon states [1,2]. Such states are the basis for long-distance quantum communication, quantum memory and quantum computing protocols.…”

Section: Introductionmentioning

confidence: 99%

Generation of broadband single-photon states in photonic-crystal fibers with flattened dispersion profiles

Chuprina

Latypov

2017

EPJ Web Conf.

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Abstract. We theoretically analyze the capability of generating broadband single-photon states in photonic crystal fibers (PCF) formed by spontaneous four-wave mixing (SFWM) using femtosecond laser pulses. The design of PCF structures with the flat dispersion profile is proposed. The characteristics of the correlated photon pairs with a broadband spectrum and low spectral correlation for these structures are calculated.

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“…Spontaneous parametric down-conversion (SPDC) is the most common way of generating non-classical states of the electromagnetic field, in particular single-photon or two-photon states [1,2]. When such states are used in the systems of long-distance quantum communications or quantum computing, it may be useful to have the possibility to store them in a quantum memory device immediately after their generation.…”

Section: Introductionmentioning

confidence: 99%

Towards spontaneous parametric down-conversion at low temperatures

et al. 2017

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Abstract. The possibility of observing spontaneous parametric downconversion in doped nonlinear crystals at low temperatures, which would be useful for combining heralded single-photon sources and quantum memories, is studied theoretically. The ordinary refractive index of a lithium niobate crystal doped with magnesium oxide LiNbO3:MgO is measured at liquid nitrogen and helium temperatures. On the basis of the experimental data, the coefficients of the Sellmeier equation are determined for the temperatures from 5 to 300 K. In addition, a poling period of the nonlinear crystal has been calculated for observing type-0 spontaneous parametric down-conversion (ooo-synchronism) at the liquid helium temperature under pumping at the wavelength of λp = 532 nm and emission of the signal field at the wavelength of λs = 794 nm, which corresponds to the resonant absorption line of Tm3+ doped ions.

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Metrology of single-photon sources and detectors: a review

Cited by 138 publications

References 200 publications

Predictable quantum efficient detector based onn-type silicon photodiodes

Predictable quantum efficient detector based onn-type silicon photodiodes

Generation of broadband single-photon states in photonic-crystal fibers with flattened dispersion profiles

Towards spontaneous parametric down-conversion at low temperatures

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