Metrology method for the correlation of line edge roughness for different resists before and after etch

Winkelmeier, Stephanie; Sarstedt, Marko; Ereken, M.; Goethals, M.; Ronse, Kurt G.

doi:10.1016/s0167-9317(01)00458-0

Cited by 34 publications

(11 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Since the Au thin film is sacrificed for the fabrication of the NIL molds, the LER is improved substantially due to the smaller grain size of the Cr thin film and ameliorated further during RIE of the quartz. This improvement in LER is commonly observed when using hard masks and photoresists to etch features 25 and is attributed to higher RIE rates at higher surface energy locations, such as areas with sharp edges. The grain size of Au, which is the primarily limiting factor for obtaining better LER, is much smaller on quartz than on SiO 2 / Si ͑data not shown͒, presumably due to the differences in surface free energies between quartz and SiO 2 / Si.…”

mentioning

confidence: 70%

Sub-30-nm patterning on quartz for imprint lithography templates

Srinivasan

Hohman

Anderson

et al. 2008

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

mentioning

confidence: 70%

Sub-30-nm patterning on quartz for imprint lithography templates

Srinivasan

Hohman

Anderson

et al. 2008

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…(3) and Eq. (4) [12]. Where 0-is the deviation from the actual line edge to the perfect line edge and n is the number of measurement points.…”

Section: B Measurement Oflinewidth and Lwrmentioning

confidence: 99%

“…Linewidth and LER are also two important parameters for the Nano CD (NCD) Linewidth Standard product lines and need to be quantitatively analyzed. Image processing and analyisis technique may be a more potential one for precision measurement of line-structure parameters [12]. It is more important to understand how the tool and/or sample characteristics affect linewidth and LER measurement results.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of nano-scale lines through anodic porous alumina membrane

Han¹,

Jiang²,

Wei³

et al. 2009

2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

View full text Add to dashboard Cite

Anodic Porous alumina membranes are fabricated with different pore sizes through second oxide technique by changing the acid electrolyte and the anodization voltage. The pore diameter value and interpore distance are evaluated through SEM images. Nanostructure patterns with nanometer scale lines can be obtained on the cleaved cross-section of porous alumina membrane. Nano CD (NCD) Iinewidth standard product lines are prepared in this way. The Iinewidth roughness (LWR) and line edge roughness (LER) have been evaluated by analyzing top-down scanning electron microscope (SEM) images off-line using image processing and analysis technology. The average Iinewidth is less than 40 nm and the LWR and LER are estimated.

show abstract

“…Therefore it is mandatory to directly investigate the etched holes themselves of porous alumina membrane. Image processing and analysis technique may be a more potential one for precision measurement of line-structure parameters [12,13,14].…”

Section: Introductionmentioning

confidence: 99%

Characterization of sidewall roughness inside porous anodic alumina template holes by scanning electron microscopy

Han

Chen

Zhang

2011

2011 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

View full text Add to dashboard Cite

Resist line edge roughness (LER) and sidewall roughness of micro/nano structures are becoming important issues of increasing concern in the sub-100 nm fabrication regime due to their critical impact on device performance. LER and sidewall roughness metrology is used to monitor individual nanostructure fabrication. Porous anodic alumina (PAA) membranes are typical nanoscale templates and can be fabricated with different pore sizes through second oxide technique by changing the acid electrolyte and the anodization voltage. The LER of sidewall inside anodic porous alumina template holes has been evaluated by analyzing top-down scanning electron microscopy (SEM) images off-line. And RMS roughness (3 ) and height-height correlation function are used to characterize the sidewall roughness inside nanoscale holes of porous alumina template.

show abstract

Metrology method for the correlation of line edge roughness for different resists before and after etch

Cited by 34 publications

References 6 publications

Sub-30-nm patterning on quartz for imprint lithography templates

Sub-30-nm patterning on quartz for imprint lithography templates

Fabrication and characterization of nano-scale lines through anodic porous alumina membrane

Characterization of sidewall roughness inside porous anodic alumina template holes by scanning electron microscopy

Contact Info

Product

Resources

About